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| 型号： | NTD70N03R-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 10A IPAK |
| 产品变化通告： | Product Obsolescence 24/Jan/2011 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13.2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1333pF @ 20V |
| 功率 - 最大： | 1.36W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NTD70N03R-1GOS |
NTD70N03R
PACKAGE DIMENSIONS
DPAK
CASE 369D-01
ISSUE B
B
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
V
R
E
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
1
4
2
3
A
Z
DIM
A
B
C
INCHES
MIN MAX
0.235 0.245
0.250 0.265
0.086 0.094
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
D
0.027 0.035
0.69 0.88
-T-
E
F
0.018 0.023
0.037 0.045
0.46 0.58
0.94 1.14
SEATING
PLANE
K
G
H
J
K
R
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.45
F
D
3 PL
J
H
S
V
Z
0.025 0.040
0.035 0.050
0.155 ---
0.63 1.01
0.89 1.27
3.93 ---
G
0.13 (0.005)
M
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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NTD70N03R/D
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相关代理商/技术参数 |
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| NTD70N03RG | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD70N03RT4 | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD70N03RT4G | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD78N03 | 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD78N03-001 | 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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