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| 型号： | NTD70N03RT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR N-CHAN 25V 72A DPAK |
| 产品变化通告： | Product Discontinuation 30/Sept/2011 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13.2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1333pF @ 20V |
| 功率 - 最大： | 1.36W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTD70N03RT4GOSCT |
NTD70N03R
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(V GS = 0 V dc , I D = 250 m A dc )
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 V dc , V GS = 0 V dc )
(V DS = 20 V dc , V GS = 0 V dc , T J = 150 ° C)
Gate-Body Leakage Current
(V GS = ± 20 V dc , V DS = 0 V dc )
V (br)DSS
I DSS
I GSS
25
-
-
-
-
28
20.5
-
-
-
-
-
1.5
10
± 100
V dc
mV/ ° C
m A dc
nA dc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m A dc )
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
-
1.5
4.0
2.0
-
V dc
mV/ ° C
Static Drain-to-Source On-Resistance (Note 3)
R DS(on)
m W
(V GS = 4.5 V dc , I D = 20 A dc )
(V GS = 10 V dc , I D = 20 A dc )
Forward Transconductance (Note 3)
(V DS = 10 V dc , I D = 15 A dc )
g FS
-
-
-
8.1
5.6
27
13
8.0
-
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C ISS
-
1333
-
pF
Output Capacitance
Transfer Capacitance
(V DS = 20 V dc , V GS = 0 V,
f = 1 MHz)
C OSS
C RSS
-
-
600
218
-
-
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t d(on)
-
6.9
-
ns
Rise Time
Turn-Off Delay Time
Fall Time
(V GS = 10 V dc , V DD = 10 V dc ,
I D = 36 A dc , R G = 3 W )
t r
t d(off)
t f
-
-
-
1.3
18.4
5.5
-
-
-
Gate Charge
(V GS = 5 V dc , I D = 36 A dc ,
V DS = 10 V dc ) (Note 3)
Q T
Q GS
Q DS
-
-
-
13.2
3.3
6.5
-
-
-
nC
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Stored
(I S = 20 A dc , V GS = 0 V dc ) (Note 3)
(I S = 20 A dc , V GS = 0 V dc , T J = 125 ° C)
(I S = 36 A dc , V GS = 0 V dc ,
dI S /dt = 100 A/ m s) (Note 3)
V SD
t rr
t a
t b
Q RR
-
-
-
-
-
-
0.86
0.73
27.9
14.8
13.1
19
1.2
-
-
-
-
-
V dc
ns
nC
Charge
3. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
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