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参数资料
| 型号： | NTD70N03RT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR N-CHAN 25V 72A DPAK |
| 产品变化通告： | Product Discontinuation 30/Sept/2011 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13.2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1333pF @ 20V |
| 功率 - 最大： | 1.36W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTD70N03RT4GOSCT |
NTD70N03R
PACKAGE DIMENSIONS
DPAK
CASE 369D-01
ISSUE B
B
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
V
R
E
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
1
4
2
3
A
Z
DIM
A
B
C
INCHES
MIN MAX
0.235 0.245
0.250 0.265
0.086 0.094
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
D
0.027 0.035
0.69 0.88
-T-
E
F
0.018 0.023
0.037 0.045
0.46 0.58
0.94 1.14
SEATING
PLANE
K
G
H
J
K
R
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.45
F
D
3 PL
J
H
S
V
Z
0.025 0.040
0.035 0.050
0.155 ---
0.63 1.01
0.89 1.27
3.93 ---
G
0.13 (0.005)
M
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NTD70N03R/D
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| NTD78N03 | 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD78N03-001 | 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD78N03-035 | 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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