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| 型号： | NTD85N02RT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 24V 12A DPAK |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 24V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.2 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17.7nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2050pF @ 20V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
| 其它名称： | NTD85N02RT4OS |
NTD85N02R
Power MOSFET
24 Volts, 85 Amps
Single N?Channel,
DPAK/IPAK
Features
http://onsemi.com
? Planar HD3e Process for Fast Switching Performance
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Low Gate Charge to Minimize Switching Losses
? Pb?Free Packages are Available
Applications
? CPU Power Delivery
? DC?DC Converters
? Low Side Switching
V (BR)DSS
24 V
R DS(ON) MAX
5.2 m W @ 10 V
N?Channel
D
I D MAX
85 A
G
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
24
± 20
Unit
V
V
S
4
Continuous Drain
Current R q JA
(Note 1)
T A = 25 ° C
T A = 85 ° C
I D
17
12
A
4
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
P D
I D
P D
2.4
12
8.8
1.25
W
A
W
1 2
3
DPAK
CASE 369AA
STYLE2
1
2
3
DPAK?3
CASE 369D
STYLE 2
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
85
58
78.1
A
W
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
Pulsed Drain T A = 25 ° C, t p = 10 m s
Current
Current Limited by Package T A = 25 ° C
Operating Junction and Storage
I DM
I DmaxPkg
T J ,
192
45
?55 to
A
A
° C
1
3
2
YWW
85
N02G
4
1 Gate
2 Drain
3 Source
4 Drain
Temperature
T STG
+150
Source Current (Body Diode)
Drain to Source dV/dt
I S
dV/dt
78
6
A
V/ns
Y
WW
85N02R
= Year
= Work Week
= Specific Device Code
1
2
3
Single Pulse Drain?to?Source Avalanche
Energy T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 13 A pk , L = 1.0 mH, R G = 25 W)
EAS
85
mJ
G
= Pb?Free Package
ORDERING INFORMATION
Lead Temperature for Soldering Purposes
T L
260
° C
See detailed ordering and shipping information in the package
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface?mounted on FR4 board using 1 sq?in pad, 1 oz Cu.
2. Surface?mounted on FR4 board using the minimum recommended pad size.
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
January, 2007 ? Rev. 9
1
Publication Order Number:
NTD85N02R/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD85N02RT4G | 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD95N02R | 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD95N02R-001 | 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD95N02R-001G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 95 Amps, 24 Volts N−Channel DPAK |
| NTD95N02R-1G | 功能描述:MOSFET 24V 95A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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