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参数资料
| 型号： | NTE162 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 14-TSSOP 0 to 70 |
| 中文描述： | 硅NPN晶体管电视垂直偏转 |
| 文件页数： | 1/2页 |
| 文件大小： | 24K |
| 代理商： | NTE162 |
NTE162
Silicon NPN Transistor
TV Vertical Deflection
Description:
The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters,
converters, regulators, and switching circuits.
Features:
High Voltage: V
CEX
= 400V
Gain Specified to 3.5A
High Frequency Response to 2.5MHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEX
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Base Current, I
B
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
400V
400V
5V
10A
2A
125W
1W/
°
C
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +150
°
C
–65
°
to +200
°
C
1
°
C/W
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
(BR)CEO(sus)
I
CEX
I
C
= 100mA, I
B
= 0, Note 1
V
CE
= 400V, V
EB(off)
= 1.5V
V
CE
= 400V, V
EB(off)
= 1.5V,
T
C
= +125
°
C
V
BE
= 5V, I
C
= 0
325
–
–
V
Collector Cutoff Current
–
–
2.5
–
–
1.0
mA
Emitter Cutoff Current
I
EBO
–
–
2.0
mA
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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