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参数资料
| 型号： | NTE3094 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Optoisolator Dual, High Speed, Open Collector NAND Gate |
| 中文描述： | 光隔离器的双通道，高速，集电极开路与非门 |
| 文件页数： | 2/3页 |
| 文件大小： | 29K |
| 代理商： | NTE3094 |
Recommended Operating Conditions:
Parameter
Input Current, Low Level (Each Channel)
Input Current, High Level (Each Channel)
Supply Voltage, Output
Fan Out (TTL Load)
Operating Temperature
Symbol
I
FL
I
FH
V
CC
N
T
A
Test Conditions
Min
0
6.3
4.5
–
0
Typ
–
–
–
–
–
Max
250
15
5.5
8
70
Unit
μ
A
mA
V
Note 1
°
C
Note 1. 6.3mA condition permits at least 20% CTR degradation guardband. Initial switching
threshold is 5mA or less.
Electrical Characteristics:
(T
A
= 0
°
to +70
°
C, Note 2 unless otherwise specified)
Parameter
Symbol
V
CC
= 5.V, V
O
= 5.5V, I
F
= 250
μ
A, Note 3
Low Level Output Voltage
V
OL
V
CC
= 5.5V, I
F
= 5mA, I
OL(sinking)
= 13mA, Note 3
High Level Supply Current
I
CCH
V
CC
= 5.V, I
F
= 0, (Both Channels)
Low Level Supply Current
I
CCL
V
CC
= 5.V, I
F
= 10mA, (Both Channels)
Input
–
Output Insulation
Leakage Current
V
IO
= 3000V DC, Note 4
Resistance
R
IO
V
IO
= 500V, T
A
= +25
°
C, Note 4
Capacitance
C
IO
f = 1MHz, T
A
= +25
°
C, Note 4
Input Forward Voltage
V
F
I
F
= 10mA, T
A
= +25
°
C, Note 3, Note 5
Input Reverse Breakdown
Voltage
Test Conditions
Min
Typ
Max
Unit
μ
A
V
High Level Output Current
I
OH
–
40
250
–
0.4
0.6
–
15
30
mA
–
27
36
mA
μ
A
I
IO
Relative Humidity = 45%, T
A
= +25
°
C, t = 5s,
–
–
1.0
–
10
12
–
pF
–
0.6
–
–
1.5
1.75
V
V
(BR)R
I
R
= 10
μ
A, T
A
= +25
°
C
5
–
–
V
Input Capacitance
C
IN
CTR
V
F
= 0, f = 1MHz, Note 3
I
F
= 5mA, R
L
= 100
, Note 6
V
II
= 500V, Note 7
f = 1MHz, Note 7
–
60
–
pF
Current Transfer Ratio
–
700
10
11
–
%
pF
Resistance (Input
–
Input)
R
II
C
II
–
–
Capacitance (Input
–
Input)
–
0.27
–
Note 2. All typicals at T
A
= +25
°
C, V
CC
= 5V unless otherwise specified.
Note 3. Each channel.
Note 4. Measured between Pin1, Pin2, Pin3 and Pin4 shorted together and Pin5, Pin6, Pin7 and
Pin8 shorted together.
Note 5. At 10mA, V
F
decreases with increasing temperature at the rate of 1.6mV/
°
C.
Note 6. DC Current Transfer Ratio is defined as the ratio of the output collector current to the forward
bias input current times 100%.
Note 7. Measured between Pin1 and Pin2 shorted together and Pin3 and Pin4 shorted together.
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