参数资料
型号: NTE3096
厂商: NTE Electronics, Inc.
英文描述: Optoisolator Low LED Drive NPN Transistor Output
中文描述: 光隔离器低LED驱动NPN晶体管输出
文件页数: 1/2页
文件大小: 22K
代理商: NTE3096
NTE3096
Optoisolator
Low LED Drive NPN Transistor Output
Description:
The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor
in a 6–Lead DIP type package. This device is designed for applications requiring low LED drive current,
high electrical isolation, small package size and low cost such as interfacing and coupling systems,
phase feedback controls, solid–state relays and general purpose switching circuits.
Features:
High Transfer Ratio with Low LED Drive
High Electrical Isolation
Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings:
(T
A
= +25
°
C, unless otherwise specified)
Infrared Emitting Diode
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width 1
μ
sec, 2% Duty Cycle)
Power Dissipation (Negligible Power in Transistor), P
D
Derate above 25
°
C ambient
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V
60mA
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mW
1.3mW/
°
C
Phototransistor
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Collector Current (Continuous), I
C
Power Dissipation (Negligible Power in Transistor), P
D
Derate above 25
°
C ambient
30V
70V
7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA
300mW
4.0mW/
°
C
Total Device
Power Dissipation (Negligible Power in Transistor), P
D
Derate above 25
°
C ambient
Surge Isolation Voltage (60Hz, Peak AC, 5sec)
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 10sec), T
L
300mW
4.0mW/
°
C
7500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +100
°
C
–55
°
to +150
°
C
+260
°
C
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