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参数资料
型号： NTE3096
厂商： NTE Electronics, Inc.
英文描述： Optoisolator Low LED Drive NPN Transistor Output
中文描述： 光隔离器低LED驱动NPN晶体管输出
文件页数： 2/2页
文件大小： 22K
代理商： NTE3096
Electrical Characteristics:
(T
A
= +25
°
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Infrared Emitting Diode
Forward Voltage
V
F
I
R
C
J
I
F
= 1mA, T
A
= 0
°
to +70
°
C
V
R
= 6V
V = 0, f = 1MH
Z
0.7
1.1
1.4
V
μ
A
pf
Reverse Leakage Current
–
0.05
10
Capacitance
–
150
–
Phototransistor
(I
F
= 0 unless otherwise specified)
Collector
–
Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
C
= 1mA
I
C
= 100
μ
A
I
E
= 100
μ
A
V
CE
= 5V, Base Open
V
CE
= 30V, Base Open, T
A
= +70
°
C
V
CB
= 5V, Emitter Open
30
–
–
V
Collector
–
Base Breakdown Voltage
70
–
–
V
Emitter
–
Base Breakdown Voltage
7
–
–
V
Collector
–
Emitter Dark Current
–
1.0
25
nA
μ
A
nA
–
–
50
Collector
–
Base Dark Current
I
CBO
–
–
10
Coupled Characteristics
DC Current Transfer Ratio
I
C
/I
F
I
F
= 1mA, V
CE
= 5V
50
–
–
%
T
A
= 0
°
to +70
°
C
30
–
–
%
Collector
–
Emitter Saturation Voltage
V
CE(sat)
R
(I
–
O)
V
ISO
C
(I
–
O)
I
F
= 1mA, I
C
= 100
μ
A
V
(I
–
O)
= 500V
DC
, Note 1
60Hz, Peak AC, 5sec, Note 1
–
–
0.5
V
V
Isolation Resistance
10
11
–
–
Isolation Surge Voltage
7500
–
–
Isolation Capacitance
V
(I
–
O)
= 0, f = 1MH
Z
–
1.3
2.5
pF
Switching Characteristics
Turn
–
On Time
t
on
t
off
V
CE
= 10V, V, R
L
= 100
–
–
20
μ
s
μ
s
Turn
–
Off Time
–
–
20
Note 1. For this test, LED Pin1 and Pin2 are common and phototransistor Pin4, Pin5, and Pin6
are common.
.260
(6.6)
Max
.350
(8.89)
Max
.350 (8.89)
Max
.300 (7.62)
.200 (5.08)
Max
.085 (2.16) Max
.070 (1.78) Max
.100 (2.54)
1
2
3
5
4
6
Emitter
Collector
Base
1
2
Anode
Cathode
3
N.C.
6
5
4
Pin Connection Diagram
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