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参数资料
| 型号： | NTE3122 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington |
| 中文描述： | 光电晶体管硅npn型，窄验收，灵敏度高，达林顿 |
| 文件页数： | 1/2页 |
| 文件大小： | 19K |
| 代理商： | NTE3122 |
NTE3122
Phototransistor
Silicon NPN, Narrow Acceptance,
High Sensitivity, Darlington
Features:
Epoxy Resin Package
Narrow Acceptance:
=
±
13
°
Typ
High Sensitivity: I
C
= 1.5mA Min @ E
e
= 0.1mW/cm
2
Visible Light Cut–Off
Applications:
VCRs, Cassette Tape Recorders
Floppy Disk Drives
Optoelectronic Switches
Automatic Stroboscopes
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Collector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Disspation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature, T
L
During Soldering, 1.4mm from bottom face of resin package, 5sec
35V
6V
50mA
75mW
–25
°
to +85
°
C
–40
°
to +85
°
C
+260
°
C
. . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter
Collector Current
Symbol
I
C
Test Conditions
V
CE
= 2V, E
e
= 0.1mW/cm
2
,
Note 1
V
CE
= 10V, E
e
= 0
Min
1.5
Typ
–
Max
4.0
Unit
mA
Collector Dark Current
Collector–Emitter Saturation Voltage V
CE(sat)
I
C
= 1.5mA, E
e
= 1mW/cm
2
,
I
CBO
–
–
–
10
–6
1.0
A
V
Note 1
0.7
Peak Emission Wavelength
Response Time (Rise)
Response Time (Fall)
λ
P
t
r
t
f
–
–
–
860
80
70
–
–
–
nm
μ
s
μ
s
V
CE
= 2V, I
C
= 10mA, R
L
= 100
Note 1. E
e
: Irradiance by CIE standard light source A (tungsten lamp).
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