参数资料
型号: NTE3123
厂商: NTE Electronics, Inc.
英文描述: Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington
中文描述: 光电晶体管硅npn型,中间验收,灵敏度高,达林顿
文件页数: 1/2页
文件大小: 20K
代理商: NTE3123
NTE3123
Phototransistor
Silicon NPN, Intermediate Acceptance,
High Sensitivity, Darlington
Features:
Epoxy Resin Package
Compact
Intermediate Acceptance:
=
±
40
°
Typ
Visible Light Cut–Off
Applications:
VCRs
Optoelectronic Switches
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Collector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Disspation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature, T
L
During Soldering, 1.4mm from surface of resin edge, 3sec
35V
6V
50mA
75mW
–25
°
to +85
°
C
–40
°
to +85
°
C
+260
°
C
. . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter
Collector Current
Collector Dark Current
Collector–Emitter Saturation Voltage V
CE(sat)
I
C
= 0.8mA, E
e
= 1mW/cm
2
,
Symbol
I
C
I
CBO
Test Conditions
V
CE
= 2V, E
v
= 2 x, Note 1
V
CE
= 10V, E
e
= 0
Min
0.2
Typ
0.4
Max
0.8
10
–6
1.0
Unit
mA
A
V
Note 1
Peak Emission Wavelength
Response Time (Rise)
Response Time (Fall)
λ
P
t
r
t
f
860
400
300
±
40
nm
μ
s
μ
s
deg.
V
CE
= 2V, I
C
= 5mA, R
L
= 100
2000
1500
Half Intensity Angle
Note 1. E
e
, E
v
: Illuminance, irradiance by CIE standard light source A (tungsten lamp).
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