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参数资料
| 型号： | NTE318 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output |
| 中文描述： | 硅NPN晶体管射频输出功率 |
| 文件页数： | 1/2页 |
| 文件大小： | 23K |
| 代理商： | NTE318 |
NTE318
Silicon NPN Transistor
RF Power Output
Description:
The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-
tions. This device utilizes improved metallization systems to achieve extreme ruggedness under se-
vere operating conditions.
Features:
Designed for HF military and commercial equipment 40W minimum with greater than 10.0dB gain
Withstands severe mismatch under operating conditions
Low inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base Voltage, V
EBO
Maximum Collector Current, I
C
Total Device Dissipation (+25
°
C), P
T
Thermal Resistance, Junction–to–Case, R
thJC
Junction Temperature Range, T
J
Storage Temperature Range, T
stg
36V
18V
4V
6A
80W
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2.2
°
C/W
–65
°
to +200
°
C
–65
°
to +200
°
C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 200mA, I
B
= 0, Note 1
Collector–Emitter Breakdown Voltage V
(BR)CES
Emitter–Base Breakdown Voltage
V
(BR)EBO
I
E
= 2.5mA, I
C
= 0
Collector Cut–Off Current
18
–
–
V
I
C
= 200mA, V
BE
= 0, Note 1
36
–
–
V
4
–
–
V
I
CBO
h
FE
f
t
C
ob
V
CB
= 15V, I
E
= 0
V
CE
= 5V, I
C
= 250mA
V
CE
= 13.5V, I
C
= 100mA
V
CB
= 12.5V, I
C
= 0,
–F
O
= 1.0MHz
28MHz/12.5V
–
–
1
mA
DC Current Gain
10
–
–
Gain Bandwidth
200
–
–
MHz
Output Capacitance
–
–
200
pF
Amplifier Power Out
P
O
P
g
47
–
–
W
Amplifier Power Gain
10
–
–
dB
Note 1. Pulsed through 25mH Inductor
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相关代理商/技术参数 |
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|---|---|
| NTE3180 | 制造商:NTE Electronics 功能描述:LED Uni-Color Red 568nm 5-Pin |
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| NTE3182 | 制造商:NTE Electronics 功能描述:LED Uni-Color Yellow 565nm 5-Pin |
| NTE3183 | 制造商:NTE Electronics 功能描述:LED Uni-Color Blue 430nm 2-Pin |
| NTE3184 | 制造商:NTE Electronics 功能描述:LED Uni-Color Blue 430nm 2-Pin |
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