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参数资料
| 型号： | NTE5462 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Controlled Rectifier (SCR) 10 Amp |
| 中文描述： | 可控硅（晶闸管）10安培 |
| 文件页数： | 1/2页 |
| 文件大小： | 20K |
| 代理商： | NTE5462 |
NTE5461 thru NTE5468
Silicon Controlled Rectifier (SCR)
10 Amp
Description:
The NTE5461 through NTE5468 series silicon controlled rectifiers are designed primarily for half–
wave AC control applications such as motor controls, heating controls, and power supplies; or wher-
ever half–wave silicon gate–controlled, solid–state devices are needed. These devices are supplied
in a TO220 type package.
Features;
Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation,
and Durability
Blocking Voltage to 800 Volts
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage; Peak Repetitive Off–State Voltage (Note 1), V
RRM
, V
DRM
NTE5461
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5462
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5463
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5465
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5466
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5468
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak Reverse Voltage; Non–Repetitive Off–State Voltage, V
RSM
, V
DSM
NTE5461
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5462
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5463
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5465
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5466
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5468
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Forward Current (All Conducting Angles, T
C
= +75
°
C), I
T(RMS)
Peak Forward Surge Current (1 Cycle, Sine Wave, 60Hz, T
C
= +80
°
C), I
TSM
Circuit Fusing Considerations (T
J
= –65
°
to +100
°
C, t = 1 to 8.3ms), I
2
t
Forward Peak gate Power (t
≤
10
μ
s), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Average Gate Power, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
Note 1. V
DRM
and V
RRM
for all types can be applied on a continuous DC basis without incurring dam-
age. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias
applied to the gate concurrently with a negative potential on the anode.
50V
100V
200V
400V
600V
800V
75V
125V
250V
500V
700V
900V
10A
100A
40A
2
s
16W
500mW
. . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . .
–40
°
to +100
°
C
–40
°
to +150
°
C
2
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
相关PDF资料 |
PDF描述 |
|---|---|
| NTE5463 | Silicon Controlled Rectifier (SCR) 10 Amp |
| NTE5465 | Silicon Controlled Rectifier (SCR) 10 Amp |
| NTE5466 | Silicon Controlled Rectifier (SCR) 10 Amp |
| NTE5468 | Silicon Controlled Rectifier (SCR) 10 Amp |
| NTE5470 | Silicon Controlled Rectifier (SCR) 5 Amp |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE5463 | 制造商:NTE Electronics 功能描述:SCR THYRISTOR 10A 200V TO-220 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 200V, TO-220 制造商:NTE Electronics 功能描述:SCR-200VRM 10A 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 200V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:200V; Gate Trigger Current Max, Igt:15mA; On State RMS Current IT(rms):10A; Peak Non Rep Surge Current Itsm 50Hz:100A; Holding Current Max Ih:20mA ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 200V 100A 3-Pin(3+Tab) TO-220 |
| NTE5465 | 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER- 400VRM 10A TO-220 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:SCR THYRISTOR 10A 400V TO-220 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 400V, TO-220 制造商:NTE Electronics 功能描述:SCR-400VRM 10A 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 400V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:400V; Gate Trigger Current Max, Igt:15mA; On State RMS Current IT(rms):10A; Peak Non Rep Surge Current Itsm 50Hz:100A; Holding Current Max Ih:20mA ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 400V 100A 3-Pin(3+Tab) TO-220 |
| NTE5466 | 制造商:NTE Electronics 功能描述:SCR THYRISTOR 10A 600V TO-220 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 600V, TO-220 制造商:NTE Electronics 功能描述:SCR-600VRM 10A 制造商:NTE Electronics 功能描述:SCR 600VRM 10A 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 600V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:15mA; On State RMS Current IT(rms):10A; Peak Non Rep Surge Current Itsm 50Hz:100A; Holding Current Max Ih:20mA ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 600V 100A 3-Pin(3+Tab) TO-220 |
| NTE5468 | 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER- 800VRM 10A TO-220 IGT=15MA 制造商:NTE Electronics 功能描述:SCR THYRISTOR 10A 800V TO-220 制造商:NTE Electronics 功能描述:SCR 800V 10A TO-220 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 800V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:800V; Gate Trigger Current Max, Igt:15mA; On State RMS Current IT(rms):10A; Peak Non Rep Surge Current Itsm 50Hz:100A; Holding Current Max Ih:20mA ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 800V 100A 3-Pin(3+Tab) TO-220 |
| NTE5470 | 制造商:NTE Electronics 功能描述: |
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