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参数资料
| 型号： | NTE621 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Rectifier, General Purpose, High Voltage, Standard Recovery (Surface Mount) |
| 中文描述： | 硅整流，通用，高电压，标准恢复（表面贴装） |
| 文件页数： | 1/2页 |
| 文件大小： | 16K |
| 代理商： | NTE621 |
NTE621
Silicon Rectifier, General Purpose, High Voltage,
Standard Recovery
(Surface Mount)
Features:
High Temperature Metallurgically Bonded
Glass Passivated Junction
High Temperature Soldering Guaranteed:
+450
°
C/5 Seconds at Terminals. Complete Device Submersible Temperature of
+260
°
C/10 Seconds in Solder Bath.
Maximum Ratings and Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified.
60Hz, resistive or inductive load. For capacitive load, derate current by 20%.)
Maximum Recurrent Peak Reverse Voltage, V
RRM
Maximum RMS Voltage, V
RMS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum DC Blocking Voltage, V
DC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Average Forward Rectified Current, I
T(AV)
Peak Forward Surge Current, I
FSM
(8.3ms Single Half Sine–Wave Superimposed on Rated Load)
Maximum Instantaneous Forward Voltage (I
T
= 1A), V
F
Maximum DC Reverse Current (V
DC
= 400V), I
R
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +125
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Full Load Reverse Current (Full Cycle Average at T
A
= +75
°
C), I
R(AV)
Typical Junction Capacitance (Note 1), C
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Terminal (Note 2), R
thJL
Maximum Thermal Resistance, Junction–to–Ambient (Note 3), R
thJA
400V
280V
400V
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30A
1.1V
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
μ
A
50
μ
A
30
μ
A
15pF
. . . . . . . . . . .
–65
°
to +175
°
C
–65
°
to +175
°
C
30
°
C/W
75
°
C/W
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
Note 1. Measured at 1MHz and applied reverse voltage of 4V
DC
.
Note 2. Thermal resistance, junction–to–terminal, 6.0mm
2
copper pads to each terminal.
Note 3. Thermal resistance, junction–to–ambient, 6.0mm
2
copper pads to each terminal.
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