参数资料
型号: NTE859SM
厂商: NTE Electronics, Inc.
英文描述: Integrated Circuit Quad, Low Noise, JFET Input Operational Amplifier
中文描述: 集成电路四路,低噪声,JFET输入运算放大器
文件页数: 1/3页
文件大小: 30K
代理商: NTE859SM
NTE859/NTE859SM
Integrated Circuit
Quad, Low Noise, JFET Input
Operational Amplifier
Description:
The NTE859 (14–Lead DIP) and NTE859SM (SOIC–14 Surface Mount) JFET–input operational am-
plifiers are low noise amplifiers with low noise input bias, offset currents, and fast slew rate. The low
harmonic distortion and low noise make these devices ideally suited as amplifiers for high–fidelity and
audio preamplifier applications. Each amplifier features JFET–inputs (for high input impedance)
coupled with bipolar output stages all integrated on a single monolithic chip.
Features:
Low Power Consumption
Wide Common–Mode and Differential Voltage Ranges
Low Input Bias and Offset Currents
Output Short–Circuit Protection
Low Total Harmonic Distortion: 0.003% Typ
Low Noise: Vn = 18nV
H
Z
Typ
High Input Impedance: JFET–Input Stage
Internal Frequency Compensation
Latch–Up Free Operation
High Slew Rate: 13V/
μ
s Typ
Absolute Maximum Ratings:
(T
A
= 0 to +70
°
C unless otherwise specified)
Supply Voltage (Note 1), V
CC
(+)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply Voltage (Note1), V
CC
(–)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage (Note 2), V
ID
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage Range (Note 1, Note 3),V
IDR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of Output Short Circuit (Note 4),t
S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from Case for 10sec), T
L
Note 1. All voltage values, except differential voltages, are with reapect to the midpoint between
V
CC
(+) and V
CC
(–).
Note 2. Differential voltages are at the non–inverting input pin with respect to the inverting pin.
Note 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage
or 15V, whichever is less.
Note 4. The output may be shorted to GND or to either supply. Temperature and/or supply voltages
must be limited to ensure that the dissipation rating is not exceeded.
18V
–18V
±
30V
±
15V
Unlimited
680mW
10mW/
°
C
0
°
to +70
°
C
–65
°
to +150
°
C
+260
°
C
. . . . . . . . . . . . . . . . . .
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