参数资料
型号: NTE888M
厂商: NTE Electronics, Inc.
英文描述: Integrated Circuit Low Power Programmable Operational Amplifier
中文描述: 集成电路低功耗可编程运算放大器
文件页数: 1/3页
文件大小: 25K
代理商: NTE888M
NTE888M
Integrated Circuit
Low Power Programmable Operational Amplifier
Description:
The NTE888M is an operational amplifier in an 8–Lead DIP type package featuring low power con-
sumption and high input impedance. In addition, the quiescent currents within this device may be
programmed by the choice of an external resistor value or current source applied to the I
SET
input.
This allows the NTE888M’s characteristics to be optimized for input current and power consumption
despite wide variations in operating power supply voltages.
Features:
±
1.2V to
±
18V Operation
Wide Programming Range
Offset Null Capability
No Frequency Compensation Required
Low Input Bias Currents
Short–Circuit Protection
Maximum Ratings:
(T
A
= +25
°
C unless otherwise noted)
Power Supply Voltages, V
CC
, V
EE
Differential Input Voltage, V
ID
Common–Mode Input Voltage, V
ICM
V
CC
and |V
EE
| < 15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
CC
and |V
EE
|
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Offset Null to V
EE
Voltage, V
off
– V
EE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Programming Current, I
set
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Programming Voltage, V
SET
Voltage from I
SET
terminal to GND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Short–Circuit Duration (Note 1), t
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. May be to GND or either Supply Voltage. Rating applies up to a case temperature of +125
°
C
or ambient temperature of +70
°
C and I
SET
30
μ
A.
±
18V
±
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
CC
, V
EE
±
15V
±
0.5V
500
μ
A
(V
CC
–2V) to V
CC
Indefinite
0
°
to +70
°
C
–55
°
to +125
°
C
+150
°
C
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