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参数资料
| 型号： | NTE906 |
| 厂商： | NTE Electronics, Inc. |
| 元件分类： | 差分放大器 |
| 英文描述： | Integrated Circuit Dual, High Frequency, Differential Amplifier |
| 中文描述： | 集成电路双路，高频率，差分放大器 |
| 文件页数： | 1/3页 |
| 文件大小： | 30K |
| 代理商： | NTE906 |
NTE906
Integrated Circuit
Dual, High Frequency, Differential Amplifier
Description:
The NTE906 is an integrated circuit in a 12–Lead TO5 type package consisting of two independent
differential amplifiers with associated constant–current transistors on a common monolithic sub-
strate. The six transistors which comprise the amplifiers are general–purpose devices which exhibit
low 1/f noise and a value of f
T
in excess of 1GHz. These features make the NTE906 useful from DC
to 500MHz. Bias and load resistors have been omitted to provide maximum application flexibility.
The monolithic construction of the NTE906 provides close electrical and thermal matching of the am-
plifiers. This feature makes this device particularly useful in dual–channel applications where
matched performance of the two channels is required.
Features:
Power Gain: 23dB (Typ) @ 200MHz
Noise Figure: 4.6dB (Typ) @ 200MHz
Two Different Amplifiers on a Common Substrate
Independently Accessible Input and Outputs
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Power Dissipation, P
D
Any One Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Package
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +55
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
The following ratings apply for each transistor:
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Substrate Voltage (Note 1), V
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-
strate (Pin9) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.
300mW
600mW
5mW/
°
C
–55
°
to +125
°
C
–65
°
to +150
°
C
15V
20V
20V
5V
50mA
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