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参数资料
| 型号： | NTE909 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuits Operational Amplifier |
| 中文描述： | 集成电路运算放大器 |
| 文件页数： | 1/3页 |
| 文件大小： | 27K |
| 代理商： | NTE909 |
NTE909 & NTE909D
Integrated Circuits
Operational Amplifier
Description:
These devices are monolithic operational amplifiers intended for general–purpose applications. Op-
eration is completely specified over the range of voltages commonly used for these devices. The de-
sign, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the
class–B output stage gives a large output capability with minimum power drain.
External components are used to frequency compensate the amplifier. Although the unity–gain com-
pensation network specified will make the amplifiers unconditionally stable in all feedback configura-
tions, compensation can be tailored to optimize high–frequency performance for any gain setting.
The fact that the amplifiers are built on a single silicon chip provides low offset and temperature drift
at minimum cost. It also ensures negligble drift due to temperature gradients in the vicinity of the am-
plifier.
Absolute Maximum Ratings:
Supply Voltage
Power Dissipation (Note 1)
Differential Input Voltage
Input Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Short–Circuit Duration (T
A
= +25
°
C)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (Soldering, 10 seconds)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 For operating at elevated temperatures, the device must be derated based on a 100
°
C maxi-
mum junction temperature and a thermal resistance 150
°
C/W junction to ambient or 45
°
C/W,
junction to case for the metal can package.
±
18V
250mW
±
10V
±
10V
5 seconds
–65
°
to +150
°
C
0
°
to +70
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300
°
C
Electrical Characteristics:
(0
°
C
≤
T
A
=
≤
+70
°
C,
±
9V
≤
V
S
≤
±
15V, C1 = 5000pF, R1 = 1.5k,
C2 = 200pF and R2 = 51
unless otherwise specified)
Parameter
Test Conditions
Min
–
–
–
–
–
–
Typ
2.0
300
0.36
100
75
125
Max
7.5
1500
2.0
500
400
750
Unit
mV
nA
μ
A
nA
nA
nA
Input Offset Voltage
Input Bias Current
T
A
= +25
°
C, R
S
≤
10k
T
A
= +25
°
C
T
A
= T
MIN
T
A
= +25
°
C
T
A
= T
MIN
T
A
= T
MAX
Input Offset Current
相关PDF资料 |
PDF描述 |
|---|---|
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| NTE914 | Integrated Circuit Zero-Voltage Switch |
| NTE916 | Integrated Circuit High Current, NPN Transistor Array, Common Emitter |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE9093 | 制造商:NTE 制造商全称:NTE Electronics 功能描述:Integrated Circuit Diode Transistor Logic (DTL) Dual J-K Flip-Flop |
| NTE9094 | 制造商:NTE Electronics 功能描述:IC-DTL M/S J-K FLIP-FLOP 制造商:NTE Electronics 功能描述:DUAL J-K F/F DIP-14 |
| NTE9097 | 制造商:NTE Electronics 功能描述:IC-DTL M/S J-K FLIP-FLOP |
| NTE9099 | 制造商:NTE Electronics 功能描述: |
| NTE909D | 制造商:NTE Electronics 功能描述:IC-HI PERFORMANCE OP AMP 制造商:NTE Electronics 功能描述:IC OP-AMP 0.25V/ us DIP-14 制造商:NTE Electronics 功能描述:IC, OP-AMP, 0.25V/ us, DIP-14; Op Amp Type:General Purpose; No. of Amplifiers:1; Slew Rate:0.25V/s; Supply Voltage Range: 9V to 15V; Amplifier Case Style:DIP; No. of Pins:14; Operating Temperature Min:0C; Supply Voltage Max:18V 制造商:NTE Electronics 功能描述:OP Amp Single GP ±18V 8-Pin Metal Can |
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