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参数资料
| 型号： | NTE912 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair) |
| 中文描述： | 集成电路通用晶体管阵列（三个孤立的晶体管和一个差异，连接晶体管配对） |
| 文件页数： | 1/3页 |
| 文件大小： | 29K |
| 代理商： | NTE912 |
NTE912
Integrated Circuit
General Purpose Transistor Array
(Three Isolated Transistors and One Differentially–Connected Transistor Pair)
Description:
The NTE912 consists of five general–purpose silicon NPN transistors on a common monolithic sub-
strate in a 14–Lead DIP type package. Two of the transistors are internally connected to form a differ-
entially–connected pair.
The transistors of the NTE912 are well suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How-
ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec-
trical and thermal matching.
Features:
Two Matched Pairs of Transistors:
V
BE
matched
±
5mV
Input Offset Current 2
μ
A Max. @ I
C
= 1mA
5 General Purpose Monolithic Transistors
Operation from DC to 120MHz
Wide Operating Current Range
Low Noise Figure: 3.2dB Typ @ 1kHz
Applications:
General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency
Range from DC to VHF
Custom Designed Differential Amplifiers
Temperature Compensated Amplifiers
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Power Dissipation (T
A
≤
+55
°
C), P
D
Each Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Package
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 55
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Substrate Voltage (Note 1), V
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16”
±
1/32” from case, 10sec max), T
L
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-
strate (Pin13) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.
300mW
750mW
6.67mW/
°
C
15V
20V
20V
5V
50mA
–55
°
to +125
°
C
–65
°
to +150
°
C
. . . . . . . . . . .
+265
°
C
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