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参数资料
| 型号： | NTE912 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair) |
| 中文描述： | 集成电路通用晶体管阵列（三个孤立的晶体管和一个差异，连接晶体管配对） |
| 文件页数： | 3/3页 |
| 文件大小： | 29K |
| 代理商： | NTE912 |
Electrical Characteristics (Cont
’
d):
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics (Cont
’
d)
Gain
–
Bandwidth Product
f
T
V
CE
= 3V, I
C
= 3mA
V
EB
= 3V, I
E
= 0
V
CB
= 3V, I
C
= 0
V
CS
= 3V, I
C
= 0
300
550
–
Emitter Base Capacitance
C
EB
C
CB
C
CI
–
0.6
–
pF
Collector Base Capacitance
–
0.58
–
pF
Collector Substrate Capacitance
–
2.8
–
pF
Q
2
Bias
Q
5
V
out
Pin Connection Diagram
Q
3
V
out
Q
4
V
in
Q
4
V
in
Q
4
V
out
Q
5
V
in
Substrate/Q
5
V
in
Q
3
V
in
Q
3
V
in
Q
2
V
in
Q
1
/Q
2
V
in
Q
1
V
in
Q
1
V
out
1
2
3
4
5
6
7
14
13
12
11
10
9
8
.600 (15.24)
1
7
14
8
.300
(7.62)
.200 (5.08)
Max
.100 (2.45)
.099 (2.5) Min
.785 (19.95)
Max
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