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参数资料
| 型号： | NTE916 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit High Current, NPN Transistor Array, Common Emitter |
| 中文描述： | 集成电路高电流，NPN晶体管阵列，共发射极 |
| 文件页数： | 1/2页 |
| 文件大小： | 23K |
| 代理商： | NTE916 |
NTE916
Integrated Circuit
High Current, NPN Transistor Array,
Common Emitter
Description:
The NTE916 is a high current transistor array in a 16–Lead DIP type package consisting of seven
silicon NPN transistors on a common monolithic substrate connected in a common–emitter config-
uration designed for directly driving seven–segment displays and light–emitting diodes (LED) dis-
plays. This device is also well suited for a variety of other drive applications including relay control
and thyristor firing.
Features:
Seven Transistors Permit a Wide Range of Applications
High Collector Current: I
C
= 100mA Max
Low Collector–Emitter Saturation Voltage: V
CE(sat)
= 400mV Typ @ 50mA
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Power Dissipation (Total Package), P
D
Per Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 55
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case, 10sec max), T
L
The Following Ratings Apply for Each Transistor in the Device
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Substrate Voltage (Note 1), V
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The collector of each transistor of the NTE916 is isolated from the substrate by an integral
diode. The substrate must be connected to a voltage which is more negative that any collec-
tor voltage in order to maintain isolation between transistors and provide normal transistor
action. To avoid undesired coupling between transistors, the substrate terminal (Pin5)
should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can
be used to establish a signal ground.
750mW
500mW
6.67mW/
°
C
–55
°
to +125
°
C
–65
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+265
°
C
. . . . . . . . . . . . . . . . .
16V
20V
20V
5V
100mA
20mA
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