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参数资料
| 型号： | NTE916 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit High Current, NPN Transistor Array, Common Emitter |
| 中文描述： | 集成电路高电流，NPN晶体管阵列，共发射极 |
| 文件页数： | 2/2页 |
| 文件大小： | 23K |
| 代理商： | NTE916 |
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector
–
Base Breakdown Voltage
Collector
–
Substrate Breakdown Voltage
Collector
–
Emitter Breakdown Voltage
Emitter
–
Base Breakdown Voltage
DC Forward Current Transfer Ratio
Symbol
V
(BR)CES
I
C
= 500
μ
A, I
E
= 0
V
(BR)CIO
I
CI
= 500
μ
A, I
E
= 0, I
B
= 0
V
(BR)CEO
I
C
= 1mA, I
B
= 0
V
(BR)EBO
I
C
= 500
μ
A
h
FE
V
CE
= 500mV, I
C
= 30mA
V
CE
= 800mV, I
C
= 50mA
V
BE(sat)
I
C
= 30mA, I
B
= 1mA
V
CE(sat)
I
C
= 30mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
CEO
V
CE
= 10V, I
B
= 0
I
CBO
V
CB
= 10V, I
E
= 0
Test Conditions
Min
20
20
16
5.0
30
40
–
–
–
–
–
Typ
60
60
24
6.9
68
70
0.87
0.27
0.4
–
–
Max
–
–
–
–
–
–
1.0
0.5
0.7
10
1
Unit
V
V
V
V
Base
–
Emitter Saturation Voltage
Collector
–
Emitter Saturation Voltage
V
V
V
μ
A
μ
A
Collector Cutoff Current
Pin Connection Diagram
Base Q
6
Collector Q
6
Base Q
4
Base Q
3
Collector Q
4
Collector Q
3
Base Q
1
Common Emitter
Collector Q
7
Base Q
7
Collector Q
5
Substrate
Base Q
5
Base Q
2
Collector Q
2
Collector Q
1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
.260 (6.6) Max
16
9
1
8
.785 (19.9)
Max
.200 (5.08)
Max
.245
(6.22)
Min
.300
(7.62)
.700 (17.7)
.100 (2.54)
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