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参数资料
| 型号： | NTES1N02 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管) |
| 中文描述： | 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-75, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 33K |
| 代理商： | NTES1N02 |
Publication Order Number:
NTES1N02/D
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 0
1
NTES1N02
Product Preview
Power MOSFET
50 mAmps, 20 Volts
N–Channel SC–75
2.5 V Gate Drive
Low Threshold Voltage: Vth = 0.5 to 1.5 V
High Speed
Enhancement Mode
Small Package
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
VGSS
20
Vdc
Gate–to–Source Voltage – Continuous
10
Vdc
Drain Current
– Continuous @ TA = 25
°
C
ID
50
mAdc
Total Power Dissipation @ TA = 25
°
C
Channel Temperature
PD
Tch
Tstg
100
mW
150
°
C
Operating and Storage Temperature
Range
– 55 to
150
°
C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
3
1
2
N–Channel
1
3
Top View
Source
Gate
Drain
2
1
50 mAMPS
20 VOLTS
RDS(on) = 10
SC–75/SOT–416
CASE 463
STYLE 1
http://onsemi.com
D
MARKING
DIAGRAM
N02
N02
D
= Device Code
= Date Code
PIN ASSIGNMENT
3
2
Device
Package
Shipping
ORDERING INFORMATION
NTES1N02
SC–75
3000 Tape & Reel
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