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参数资料
| 型号： | NTF5P03T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 3.7 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封装： | MINIATURE, CASE 318E-04, TO-261, 4 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 69K |
| 代理商： | NTF5P03T3 |
NTF5P03T3
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
V
DSS
–30
V
Drain–to–Gate Voltage (R
GS
= 1.0 M )
V
DGR
–30
V
Gate–to–Source Voltage – Continuous
V
GS
±
20
V
1
″
SQ.
FR–4 or G–10 PCB
10 seconds
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ T
A
= 25
°
C
Linear Derating Factor
Drain Current – Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 70
°
C
Pulsed Drain Current (Note 1)
R
THJA
P
D
I
D
I
D
I
DM
40
3.13
25
–5.2
–4.1
–26
°
C/W
Watts
mW/
°
C
A
A
A
Minimum
FR–4 or G–10 PCB
10 seconds
Thermal Resistance – Junction to Ambient
Total Power Dissipation @ T
A
= 25
°
C
Linear Derating Factor
Drain Current – Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 70
°
C
Pulsed Drain Current (Note 1)
R
THJA
P
D
I
D
I
D
I
DM
80
1.56
12.5
–3.7
–2.9
–19
°
C/W
Watts
mW/
°
C
A
A
A
Operating and Storage Temperature Range
T
J
, T
stg
– 55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy – Starting T
J
= 25
°
C
(V
DD
= –30 Vdc, V
GS
= –10 Vdc, Peak I
L
= –12 Apk, L = 3.5 mH, R
G
= 25 )
E
AS
250
mJ
1. Repetitive rating; pulse width limited by maximum junction temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTF5P03T3D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTF5P03T3G | 功能描述:MOSFET 30V 5.2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTF5P03T3G | 制造商:ON Semiconductor 功能描述:TRANSISTOR |
| NTF6P02 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -10 Amps, -20 Volts |
| NTF6P02T3 | 功能描述:MOSFET -20V -6A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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