参数资料
型号: NTF5P03T3
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: Power MOSFET
中文描述: 3.7 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA
封装: MINIATURE, CASE 318E-04, TO-261, 4 PIN
文件页数: 4/8页
文件大小: 69K
代理商: NTF5P03T3
NTF5P03T3
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
10
0
6
2
8
4
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
–V
GS,
GATE–TO–SOURCE VOLTAGE (VOLTS)
D
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= –55
°
C
0
0.100
0.075
0
1
3
–V
GS,
GATE–TO–SOURCE VOLTAGE (VOLTS)
R
D
–I
D,
DRAIN CURRENT (AMPS)
R
D
V
GS
= –10 V
1.6
1.4
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
(
–50
50
25
0
–25
75
125
100
I
D
= –2.0 A
V
GS
= –10 V
0.8
0.6
150
1
10
–V
DS,
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
D
,
0
25
30
20
10
15
100
5
2
0
1
1.2
0.6
0.3
–V
DS,
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
D
0
3
3
6
3.5
5
4
4.5
5.5
0.050
0.025
1.2
2
0
0.15
0.10
0
4
6
5
3
0.05
1
1
V
GS
= –2.7 V
1.5
T
J
= 100
°
C
T
J
= 25
°
C
I
D
= –4.0 A
T
J
= 25
°
C
V
DS
–10 V
V
GS
= 0 V
4
5
0.9
4
2
T
J
= 125
°
C
1.8
V
GS
= –3.1 V
V
GS
= –3.3 V
V
GS
= –3.5 V
V
GS
= –3.7 V
V
GS
= –3.9 V
V
GS
= –4.1 V
T
J
= 25
°
C
V
GS
= –4.3 V
V
GS
= –4.5 V
V
GS
= –6.0 V
V
GS
= –8.0 V
V
GS
= –10 V
0.20
7
8
V
GS
= –4.5 V
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