参数资料
型号: NTF5P03T3D
厂商: ON SEMICONDUCTOR
英文描述: Power MOSFET
中文描述: 功率MOSFET
文件页数: 5/8页
文件大小: 69K
代理商: NTF5P03T3D
NTF5P03T3
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
10
10
0
20
30
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
–V
GS
100
1
0.1
0.01
1000
100
10
12.5
5.0
2.5
0
300
100
50
0
3
0
0.5
5000
4000
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
C
3000
2000
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
G
,
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE ( )
Figure 10. Diode Forward Voltage versus Current
–V
SD
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
S
,
t
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
–V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Mounted on 2”sq. FR4 board (1”sq. 2 oz. Cu 0.06” thick
single sided) with on die operating, 10 s max.
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
D
,
E
A
,
A
0
50
40
20
60
1
10
100
0.7
0.6
1.0
0.1
10
100
1
25
125
150
100
75
50
I
D
= –2 A
T
J
= 25
°
C
–V
GS
V
GS
= 0 V
V
DS
= 0 V
C
iss
T
J
= 25
°
C
C
rss
C
iss
C
oss
C
rss
1
0.8
0.9
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
°
C
V
DD
= –15 V
I
D
= –4.0 A
V
GS
= –10 V
V
GS
= 0 V
T
J
= 25
°
C
I
D
= –6 A
1 ms
100 s
10 ms
dc
t
r
t
d(off)
t
d(on)
–V
DS
150
200
250
Q
2
Q
1
Q
T
0
30
10
t
f
1000
6000
7.5
10
10
2
350
–V
DS
D
,
10 s
0
5
10
15
20
25
相关PDF资料
PDF描述
NTF6P02T3 Power MOSFET -6.0 Amps, -20 Volts P–Channel SOT–223(-6.0A,-20V,P通道,SOT-23封装的功率MOSFET)
NTG103-39XX High Accuracy NTC Thermistors
NTG104-36XX High Accuracy NTC Thermistors
NTG104-41XX High Accuracy NTC Thermistors
NTG403-35XX High Accuracy NTC Thermistors
相关代理商/技术参数
参数描述
NTF5P03T3G 功能描述:MOSFET 30V 5.2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTF5P03T3G 制造商:ON Semiconductor 功能描述:TRANSISTOR
NTF6P02 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -10 Amps, -20 Volts
NTF6P02T3 功能描述:MOSFET -20V -6A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTF6P02T3/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:NTF6P02T3