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参数资料
| 型号： | NTF6P02T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET -6.0 Amps, -20 Volts P–Channel SOT–223(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) |
| 中文描述： | 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, TO-261, 4 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 67K |
| 代理商： | NTF6P02T3 |
NTF6P02T3
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 4)
(V
GS
= 0 Vdc,
I
D
= –250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
–20
–
–25
–11
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= –20 Vdc, V
GS
= 0 Vdc)
(V
DS
= –20 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
–
–
–
–
–1.0
–10
Adc
Gate–Body Leakage Current
(V
GS
=
±
8.0 Vdc, V
DS
= 0 Vdc)
I
GSS
–
–
±
100
nAdc
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage (Note 4)
(V
DS
= V
GS
,
I
D
= –250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
–0.4
–
–0.7
2.6
–1.0
–
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (Note 4)
(V
GS
= –4.5 Vdc, I
D
= –6.0 Adc)
(V
GS
= –2.5 Vdc, I
D
= –4.0 Adc)
(V
GS
= –2.5 Vdc, I
D
= –3.0 Adc)
R
DS(on)
–
–
–
44
57
57
50
70
–
m
Forward Transconductance
(Note 4)
(V
DS
= –10 Vdc, I
D
= –6.0 Adc)
g
fs
–
12
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= –16 Vdc, V
GS
= 0 V,
1 0 MH )
f = 1.0 MHz)
C
iss
–
900
1200
pF
Output Capacitance
C
oss
–
350
500
Transfer Capacitance
C
rss
–
90
150
Input Capacitance
(V
DS
= –10 Vdc, V
GS
= 0 V,
1 0 MH )
f = 1.0 MHz)
C
iss
–
940
–
pF
Output Capacitance
C
oss
–
410
–
Transfer Capacitance
C
rss
–
110
–
SWITCHING CHARACTERISTICS
(Note 5)
Turn–On Delay Time
(V
DD
= –5.0 Vdc, I
D
= –1.0 Adc,
4 5 Vd
V
GS
= –4.5 Vdc,
R
G
= 6.0 )
t
d(on)
–
7.0
12
ns
Rise Time
t
r
–
25
45
Turn–Off Delay Time
t
d(off)
–
75
125
Fall Time
t
f
–
50
85
Turn–On Delay Time
(V
DD
= –16 Vdc, I
D
= –6.0 Adc,
4 5 Vd
V
GS
= –4.5 Vdc,
R
G
= 2.5 )
t
d(on)
–
8.0
–
ns
Rise Time
t
r
–
30
–
Turn–Off Delay Time
t
d(off)
–
60
–
Fall Time
t
f
–
60
–
Gate Charge
(V
DS
= –16 Vdc, I
D
= –6.0 Adc,
4 5 Vd ) (N t 4)
V
GS
= –4.5 Vdc) (Note 4)
Q
T
–
15
20
nC
Q
gs
–
1.7
–
Q
gd
–
6.0
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(I
S
= –3.0 Adc, V
GS
= 0 Vdc) (Note 4)
(I
S
= –2.1 Adc, V
GS
= 0 Vdc)
(I
S
= –3.0 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
–
–
–
–0.82
–0.74
–0.68
–1.2
–
–
Vdc
Reverse Recovery Time
(I
S
= –3.0 Adc, V
GS
= 0 Vdc,
dI /dt = 100 A/ s) (Note 4)
100 A/
) (N t 4)
t
rr
–
42
–
ns
t
a
–
17
–
t
b
–
25
–
Reverse Recovery Stored Charge
Q
RR
–
0.036
–
C
4. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
5. Switching characteristics are independent of operating junction temperatures.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTF6P02T3/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NTF6P02T3 |
| NTF6P02T3_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -6.0 Amps, -20 Volts |
| NTF6P02T3-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223 |
| NTF6P02T3-D_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223 |
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