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参数资料
| 型号： | NTF6P02T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET -6.0 Amps, -20 Volts P–Channel SOT–223(-6.0A,-20V，P通道，SOT-23封装的功率MOSFET) |
| 中文描述： | 10 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, TO-261, 4 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 67K |
| 代理商： | NTF6P02T3 |
NTF6P02T3
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
–V
DS
–V
DS
10
10
0
15
20
–V
GS
1000
100
10
5
2
1
0
7
0
2400
1800
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
C
1200
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
–
G
,
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE ( )
Figure 10. Diode Forward Voltage versus Current
–V
SD
, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
–
S
,
t
0
8
16
1
10
100
0.3
0.6
1.2
I
D
= –6.0 A
T
J
= 25
°
C
–V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
°
C
C
rss
C
iss
C
oss
C
rss
1
0.9
C
iss
V
DD
= –16 V
I
D
= –3.0 A
V
GS
= –4.5 V
V
GS
= 0 V
T
J
= 25
°
C
t
r
t
d(off)
t
d(on)
Q
gd
Q
gs
Q
T
0
12
4
t
f
600
3000
3
4
2
–
D
,
0
4
8
12
16
20
5
5
1
3
4
5
6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTF6P02T3/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NTF6P02T3 |
| NTF6P02T3_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -6.0 Amps, -20 Volts |
| NTF6P02T3-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223 |
| NTF6P02T3-D_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -10 Amps, -20 Volts P−Channel SOT−223 |
| NTF6P02T3G | 功能描述:MOSFET -20V -6A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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