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| 型号： | NTHD3101FT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.2A CHIPFET |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 3.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 680pF @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
NTHD3101F
Power MOSFET and
Schottky Diode
? 20 V, FETKY t , P ? Channel, ? 4.4 A, with
4.1 A Schottky Barrier Diode, ChipFET t
Features
? Leadless SMD Package Featuring a MOSFET and Schottky Diode
? 40% Smaller than TSOP ? 6 Package
? Leadless SMD Package Provides Great Thermal Characteristics
? Independent Pinout to each Device to Ease Circuit Design
? Trench P ? Channel for Low On Resistance
? Ultra Low V F Schottky
? Pb ? Free Packages are Available
Applications
? Li ? Ion Battery Charging
? High Side DC ? DC Conversion Circuits
? High Side Drive for Small Brushless DC Motors
? Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
? 20 V
V R MAX
20 V
G
http://onsemi.com
MOSFET
R DS(on) TYP
64 m W @ ? 4.5 V
85 m W @ ? 2.5 V
SCHOTTKY DIODE
V F TYP
0.510 V
S
A
I D MAX
? 4.4 A
I F MAX
4.1 A
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
? 20
± 8.0
Units
V
V
D
P ? Channel MOSFET
C
Schottky Diode
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 5s
Steady
State
t ≤ 5s
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
T J = 25 ° C
I D
P D
? 3.2
? 2.3
? 4.4
1.1
2.1
A
W
1
8
ChipFET
CASE 1206A
STYLE 3
Pulsed Drain Current
t p = 10 m s
I DM
? 13
A
PIN
MARKING
Operating Junction and Storage Temperature
T J , T STG
? 55 to
150
° C
CONNECTIONS
1 8
DIAGRAM
Source Current (Body Diode)
I S
2.5
A
A
C
1
8
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
SCHOTTKY DIODE MAXIMUM RATINGS
(T J = 25 ° C unless otherwise noted)
Parameter
T L
Symbol
260
Value
° C
Units
A
S
G
2
3
4
7
6
5
C
D
D
2
3
4
7
6
5
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Steady
Forward Current State
T J = 25 ° C
V RRM
V R
I F
20
20
2.2
V
V
V
D1 = Specific Device Code
M = Month Code
G = Pb ? Free Package
t ≤ 5s
4.1
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
November, 2008 ? Rev. 4
1
Publication Order Number:
NTHD3101F/D
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| NTHD3133PF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET? |
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