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参数资料
| 型号： | NTHD4102PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CH DUAL20V CHIPFET |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 16V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 标准包装 |
| 其它名称： | NTHD4102PT1GOSDKR |
NTHD4102P
Power MOSFET
? 20 V, ? 4.1 A, Dual P ? Channel ChipFET t
Features
? Offers an Ultra Low R DS(ON) Solution in the ChipFET Package
? Miniature ChipFET Package 40% Smaller Footprint than TSOP ? 6
? Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
? Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
? Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
? Pb ? Free Package is Available
V (BR)DSS
? 20 V
S 1
http://onsemi.com
R DS(ON) TYP
64 m W @ ? 4.5 V
85 m W @ ? 2.5 V
120 m W @ ? 1.8 V
I D MAX
? 4.1 A
S 2
Applications
? Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, and PDAs
? Charge Control in Battery Chargers
? Buck and Boost Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Value
Unit
G 1
D 1
P ? Channel MOSFET
G 2
D 2
P ? Channel MOSFET
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 20
" 8.0
V
V
ChipFET
CASE 1206A
STYLE 2
Continuous Drain
Current (Note 1)
Steady State
T A = 25 ° C
T A = 85 ° C
I D
? 2.9
? 2.1
A
PIN
MARKING
t ≤ 10 s
T A = 25 ° C
? 4.1
CONNECTIONS
DIAGRAM
Power Dissipation
(Note 1)
Steady State
t ≤ 10 s
T A = 25 ° C
P D
1.1
2.1
W
D 1 8
1 S 1
1
8
Pulsed Drain t p = 10 m s
Current
Operating Junction and Storage Temperature
I DM
T J ,
T STG
? 16
? 55 to
150
A
° C
D 1 7
D 2 6
D 2 5
2 G 1
3 S 2
4 G 2
2
3
4
7
6
5
Source Current (Body Diode)
I S
? 1.1
A
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
THERMAL RESISTANCE RATINGS
Parameter
T L
Symbol
260
Max
° C
Unit
C7 = Specific Device Code
M = Month Code
G = Pb ? Free Package
ORDERING INFORMATION
Junction ? to ? Ambient, Steady State (Note 1)
Junction ? to ? Ambient, t ≤ 10s (Note 1)
R q JA
113
60
° C/W
Device
NTHD4102PT1
Package
ChipFET
Shipping ?
3000/Tape & Reel
NTHD4102PT1G
3000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
ChipFET
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 6
1
Publication Order Number:
NTHD4102P/D
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相关代理商/技术参数 |
参数描述 |
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| NTHD4401PT1 | 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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