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| 型号： | NTHD5903T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT01; No. of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Body Style:Straight |
| 中文描述： | 2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 1206A-03, CHIPFET-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 69K |
| 代理商： | NTHD5903T1 |
Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 2
1
Publication Order Number:
NTHD5903T1/D
NTHD5903T1
Power MOSFET
Dual P-Channel ChipFET
2.1 Amps, 20 Volts
Features
Low R
DS(on)
for Higher Efficiency
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package Saves Board Space
Applications
Power Management in Portable and Battery–Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
5 secs
Steady
State
Unit
Drain–Source Voltage
V
DS
–20
V
Gate–Source Voltage
V
GS
12
V
Continuous Drain Current
(T
J
= 150
°
C) (Note 1)
T
A
= 25
°
C
T
A
= 85
°
C
I
D
2.9
2.1
2.1
1.5
A
Pulsed Drain Current
I
DM
10
A
Continuous Source Current
(Diode Conduction) (Note 1)
I
S
–1.8
–0.9
A
Maximum Power Dissipation
(Note 1)
T
A
= 25
°
C
T
A
= 85
°
C
P
D
2.1
1.1
1.1
0.6
W
Operating Junction and Storage
Temperature Range
T
J
, T
stg
–55 to +150
°
C
1. Surface Mounted on 1
″
x 1
″
FR4 Board.
G1
G2
S1
D1
S2
D2
P–Channel MOSFET
P–Channel MOSFET
Device
Package
Shipping
ORDERING INFORMATION
NTHD5903T1
ChipFET
3000/Tape & Reel
ChipFET
CASE 1206A
STYLE 2
DUAL P–CHANNEL
2.1 AMPS, 20 VOLTS
R
DS(on)
= 155 m
1
2
3
4
5
6
7
8
PIN CONNECTIONS
MARKING
DIAGRAM
A
A7 = Specific Device Code
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
8
7
6
5
http://onsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| NTHD5903T1-D | Circular Connector; Body Material:Aluminum; Series:PT01; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket; Insert Arrangement:8-4 |
| NTHD5903 | Power MOSFET Dual P-Channel 2.2 A, 20 V(2.2A，20V，双P通道的功率MOSFET) |
| NTHS2101P | −8.0 V, −7.5 A P−Channel ChipFET |
| NTHS2101PT1 | −8.0 V, −7.5 A P−Channel ChipFET |
| NTHS2101PT1G | −8.0 V, −7.5 A P−Channel ChipFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD5903T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET Dual P-Channel ChipFET? |
| NTHD5903T1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET |
| NTHD5903T1-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Dual P-Channel ChipFET |
| NTHD5903T1G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5904N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET |
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