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| 型号： | NTHD5903T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT01; No. of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Body Style:Straight |
| 中文描述： | 2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 1206A-03, CHIPFET-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 69K |
| 代理商： | NTHD5903T1 |
NTHD5903T1
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
3 V
125
°
C
0
10
5
8
6
6
3
2
–V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
D
D
4
2
0
1
Figure 1. On–Region Characteristics
0
10
8
3
2
4
6
4
2
1
0
5
Figure 2. Transfer Characteristics
V
GS
, GATE–TO–SOURCE VOLTAGE (VOLTS)
1
2
4
3
2
0
Figure 3. On–Resistance vs. Gate–to–Source
Voltage
–V
GS
, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
D
D
I
D
D
1
9
10
8
5
0.25
4
0.15
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
–I
D,
DRAIN CURRENT (AMPS)
–50
0
–25
25
1.4
1.2
1
0.8
0.6
50
125
100
Figure 5. On–Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
V
GS
= 1.4 V
4
1
3
T
C
= –55
°
C
I
D
= –2.1 A
T
J
= 25
°
C
0.4
0.05
75
150
T
J
= 25
°
C
I
D
= –2.1 A
V
GS
= –4.5 V
R
D
D
R
4
25
°
C
R
D
D
1.6
V
GS
= –4.5 V
V
GS
= –3.6 V
1.8 V
2.2 V
0
5
7
6
2
3
0
4
8
1.0E–11
20
16
Figure 6. Drain–to–Source Leakage Current
vs. Voltage
–V
DS
, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
12
V
GS
= 0 V
I
D
,
T
J
= 150
°
C
T
J
= 100
°
C
2.4 V
2.6 V
2.8 V
3.4 V
3.6 V
V
GS
= 4 V – 10 V
0.35
0.2
0.1
0.3
V
GS
= –2.5 V
1.0E–10
1.0E–9
1.0E–8
1.0E–7
1.0E–6
T
J
= 25
°
C
相关PDF资料 |
PDF描述 |
|---|---|
| NTHD5903T1-D | Circular Connector; Body Material:Aluminum; Series:PT01; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket; Insert Arrangement:8-4 |
| NTHD5903 | Power MOSFET Dual P-Channel 2.2 A, 20 V(2.2A，20V，双P通道的功率MOSFET) |
| NTHS2101P | −8.0 V, −7.5 A P−Channel ChipFET |
| NTHS2101PT1 | −8.0 V, −7.5 A P−Channel ChipFET |
| NTHS2101PT1G | −8.0 V, −7.5 A P−Channel ChipFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD5903T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET Dual P-Channel ChipFET? |
| NTHD5903T1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET |
| NTHD5903T1-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Dual P-Channel ChipFET |
| NTHD5903T1G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5904N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET |
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