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| 型号： | NTJD4105CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N+P 20,8V 630MA SOT-363 |
| 产品目录绘图： | MOSFET SOT-363 Pkg |
| 标准包装： | 10 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V，8V |
| 电流 - 连续漏极(Id) @ 25° C： | 630mA，775mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 375 毫欧 @ 630mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 46pF @ 20V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTJD4105CT1GOSDKR |
NTJD4105C
Small Signal MOSFET
20 V / ? 8.0 V, Complementary,
+0.63 A / ? 0.775 A, SC ? 88
Features
? Complementary N and P Channel Device
? Leading ? 8.0 V Trench for Low R DS(on) Performance
? ESD Protected Gate ? ESD Rating: Class 1
? SC ? 88 Package for Small Footprint (2 x 2 mm)
? Pb ? Free Packages are Available
Applications
? DC ? DC Conversion
? Load/Power Switching
? Single or Dual Cell Li ? Ion Battery Supplied Devices
? Cell Phones, MP3s, Digital Cameras, PDAs
V (BR)DSS
N ? Ch 20 V
P ? Ch ? 8.0 V
http://onsemi.com
R DS(on) TYP
0.29 W @ 4.5 V
0.36 W @ 2.5 V
0.22 W @ ? 4.5 V
0.32 W @ ? 2.5 V
0.51 W @ ? 1.8 V
I D Max
0.63 A
? 0.775 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain ? to ? Source Voltage
N ? Ch
Symbol
V DSS
Value
20
Unit
V
SOT ? 363
SC ? 88 (6 ? LEADS)
P ? Ch
? 8.0
Gate ? to ? Source Voltage
N ? Ch
P ? Ch
V GS
± 12
± 8.0
V
S 1
1
6
D 1
Continuous Drain Current
? Steady State
(Based on R q JA )
N ? Ch
P ? Ch
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
0.63
0.46
? 0.775
A
G 1
2
5
G 2
T A = 85 ° C
? 0.558
Continuous Drain Current
? Steady State
(Based on R q JL )
N ? Ch
P ? Ch
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
0.91
0.65
? 1.1
? 0.8
D 2
3
Top View
4
S 2
Pulsed Drain Current
tp ≤ 10 m s
I DM
± 1.2
A
(Based on R q JA )
(Based on R q JL )
Power Dissipation ? Steady State T A = 25 ° C
T A = 85 ° C
Power Dissipation ? Steady State T A = 25 ° C
T A = 85 ° C
Operating Junction and Storage Temperature
Source Current (Body Diode) N ? Ch
P ? Ch
P D
T J ,
T STG
I S
0.27
0.14
0.55
0.29
? 55 to
150
0.63
? 0.775
W
° C
A
1
SC ? 88/SOT ? 363
CASE 419B
STYLE 28
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
6
TC M G
G
1
Max
Max
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
THERMAL RESISTANCE RATING S (Note 1)
Junction ? to ? Ambient Typ
– Steady State
Junction ? to ? Lead (Drain) Typ
– Steady State
T L
R q JA
R q JL
260
400
460
194
226
° C
° C/W
S1 G1 D2
TC = Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 2
1
Publication Order Number:
NTJD4105C/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJD4105CT2 | 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4105CT2G | 功能描述:MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4105CT4 | 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4105CT4G | 功能描述:MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4152P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 |
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