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| 型号： | NTJD4105CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N+P 20,8V 630MA SOT-363 |
| 产品目录绘图： | MOSFET SOT-363 Pkg |
| 标准包装： | 10 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V，8V |
| 电流 - 连续漏极(Id) @ 25° C： | 630mA，775mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 375 毫欧 @ 630mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 46pF @ 20V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTJD4105CT1GOSDKR |
NTJD4105C
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source
Breakdown Voltage
V (BR)DSS
N
P
V GS = 0 V
I D = 250 m A
I D = ? 250 m A
20
? 8.0
27
? 10.5
V
Drain ? to ? Source Breakdown
Voltage Temperature Coeffi-
cient
V (BR)DSS
/ T J
N
P
22
? 6.0
mV/ ° C
Zero Gate Voltage Drain Cur-
rent
Gate ? to ? Source
Leakage Current
I DSS
I GSS
N
P
N
P
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ? 6.4 V
V DS = 0 V
T J = 25 ° C
V GS = ± 12 V
V GS = ± 8.0
1.0
1.0
10
10
m A
m A
ON CHARACTERISTICS (Note 2 )
Gate Threshold Voltage
V GS(TH)
N
P
V GS = V DS
I D = 250 m A
I D = ? 250 m A
0.6
? 0.45
0.92
? 0.83
1.5
? 1.0
V
Gate Threshold
Temperature Coefficient
V GS(TH) /
T J
N
P
? 2.1
2.2
? mV/ ° C
Drain ? to ? Source On Resist-
ance
R DS(on)
N
P
V GS = 4.5 V I D = 0.63 A
V GS = ? 4.5 V, I D = ? 0.57 A
0.29
0.22
0.375
0.30
W
N
P
P
V GS = 2.5 V, I D = 0.40 A
V GS = ? 2.5 V, I D = ? 0.48 A
V GS = ? 1.8 V, I D = ? 0.20 A
0.36
0.32
0.51
0.445
0.46
0.90
Forward Transconductance
g FS
N
V DS = 4.0 V I D = 0.63 A
2.0
S
CHARGES AND CAPACITANCE S
P
V DS = ? 4.0 V, I D = ? 0.57 A
2.0
Input Capacitance
C ISS
N
V DS = 20 V
33
46
pF
P
V DS = ? 8.0V
160
225
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
N
P
N
f = 1 MHz, V GS = 0 V
V DS = 20 V
V DS = ? 8.0 V
V DS = 20 V
13
38
2.8
22
55
5.0
P
V DS = ? 8.0 V
28
40
Total Gate Charge
Q G(TOT)
N
V GS = 4.5 V, V DS = 10 V, I D = 0.7 A
1.3
3.0
nC
P
V GS = ? 4.5 V, V DS = ? 5.0 V, I D = ? 0.6 A
2.2
4.0
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
N
P
N
P
N
P
V GS = 4.5 V, V DS = 10 V, I D = 0.7 A
V GS = ? 4.5 V, V DS = ? 5.0 V, I D = ? 0.6 A
V GS = 4.5 V, V DS = 10 V, I D = 0.7 A
V GS = ? 4.5 V, V DS = ? 5.0 V, I D = ? 0.6 A
V GS = 4.5 V, V DS = 10 V, I D = 0.7 A
V GS = ? 4.5 V, V DS = ? 5.0 V, I D = ? 0.6 A
0.1
0.1
0.2
0.5
0.4
0.5
SWITCHING CHARACTERISTIC S (Note 3)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
N
V GS = 4.5 V, V DD = 10 V,
I D = 0.5 A, R G = 20 W
0.083
0.227
0.786
0.506
m s
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
P
V GS = ? 4.5 V, V DD = ? 4.0 V,
I D = ? 0.5 A, R G = 8.0 W
0.013
0.023
0.050
0.036
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
N
P
V GS = 0 V, T J = 25 ° C
I S = 0.23 A
I S = ? 0.23 A
0.76
0.76
1.1
1.1
V
N
P
V GS = 0 V, T J = 125 ° C
I S = 0.23 A
I S = ? 0.23 A
0.63
0.63
Reverse Recovery Time
t RR
N
P
V GS = 0 V,
d IS /d t = 90 A/ m s
I S = 0.23 A
I S = ? 0.23 A
0.410
0.078
m s
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJD4105CT2 | 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4105CT2G | 功能描述:MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4105CT4 | 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4105CT4G | 功能描述:MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD4152P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 |
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