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| 型号： | NTJD4401NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V SOT-363 |
| 标准包装： | 10,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 630mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 375 毫欧 @ 630mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 46pF @ 20V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 带卷 (TR) |
NTJD4401N, NVJD4401N
Small Signal MOSFET
20 V, Dual N ? Channel, SC ? 88
ESD Protection
Features
? Small Footprint (2 x 2 mm)
? Low Gate Charge N ? Channel Device
? ESD Protected Gate
? Same Package as SC ? 70 (6 Leads)
? AEC ? Q101 Qualified and PPAP Capable ? NVJD4401N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Load Power Switching
? Li ? Ion Battery Supplied Devices
? Cell Phones, Media Players, Digital Cameras, PDAs
? DC ? DC Conversion
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
20 V
S 1
http://onsemi.com
R DS(on) Typ
0.29 W @ 4.5 V
0.36 W @ 2.5 V
SC ? 88 (SOT ? 363)
1 6
I D Max
0.63 A
D 1
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
V DSS
20
V
G 1
2
5
G 2
Gate ? to ? Source Voltage
V GS
± 12
V
Continuous Drain
Current
(Based on R q JA )
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
0.63
0.46
A
D 2
3
4
S 2
Power Dissipation
(Based on R q JA )
Steady
State
T A = 25 ° C
T A = 85 ° C
P D
0.27
0.14
W
Top View
Continuous Drain Steady T A = 25 ° C
Current State
(Based on R q JL ) T A = 85 ° C
Power Dissipation Steady T A = 25 ° C
(Based on R q JL ) State
T A = 85 ° C
Pulsed Drain Current t ≤ 10 m s
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I D
P D
I DM
T J , T STG
I S
T L
0.91
0.65
0.55
0.29
± 1.2
? 55 to
150
0.63
260
A
W
A
° C
A
° C
1
SC ? 88/SOT ? 363
CASE 419B
STYLE 28
TD
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
6
TD M G
G
1
S1 G1 D2
= Device Code
THERMAL RESISTANCE RATINGS (Note 1)
M
G
= Date Code
= Pb ? Free Package
Parameter
Junction ? to ? Ambient – Steady State
Symbol
R q JA
Typ
400
Max
460
Units
° C/W
(Note: Microdot may be in either location)
Junction ? to ? Lead (Drain) – Steady State R q JL 194 226
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 6
1
Publication Order Number:
NTJD4401N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTJD5121N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 V, 295 mA, Dual N-Channel with ESD Protection, SC-88 |
| NTJD5121NT1G | 功能描述:MOSFET NFET SC88D 60V 295mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJD5121NT2G | 功能描述:MOSFET NFET SC88D 60V 295mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3151P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 |
| NTJS3151PT1 | 功能描述:MOSFET 12V 3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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