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参数资料
| 型号： | NTJD4401NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V SOT-363 |
| 标准包装： | 10,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 630mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 375 毫欧 @ 630mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 46pF @ 20V |
| 功率 - 最大： | 270mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 带卷 (TR) |
NTJD4401N, NVJD4401N
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
V (BR)DSS
V (BR)DSS /T J
I DSS
I GSS
V GS = 0 V, I D = 250 m A
V GS = 0 V, V DS = 16 V
V DS = 0 V, V GS = ± 12 V
20
27
22
1.0
10
V
mV/ ° C
m A
m A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.6
0.92
1.5
V
Gate Threshold Temperature
Coefficient
V GS(TH) /T J
? 2.1
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.5 V, I D = 0.63 A
0.29
0.375
W
V GS = 2.5 V, I D = 0.40 A
0.36
0.445
Forward Transconductance
g FS
V DS = 4.0 V, I D = 0.63 A
2.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
33
46
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 20 V
13
2.8
22
5.0
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V,
I D = 0.63 A
1.3
0.1
0.2
0.4
3.0
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
td (ON)
0.083
m s
Rise Time
Turn ? Off Delay Time
Fall Time
tr
td (OFF)
tf
V GS = 4.5 V, V DD = 10 V,
I D = 0.5 A, R G = 20 W
0.227
0.786
0.506
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S =0.23 A
T J = 25 ° C
T J = 125 ° C
0.76
0.63
1.1
V
Reverse Recovery Time
t RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 0.63 A
0.410
m s
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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