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| 型号： | NTJS3157NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3.2A SOT-363 |
| 产品目录绘图： | MOSFET SOT-363 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 400mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 500pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTJS3157NT1GOSDKR |
NTJS3157N
Trench Power MOSFET
20 V, 4.0 A, Single N ? Channel, SC ? 88
Features
? Leading Trench Technology for Low R DS(ON) Extending Battery Life
? Fast Switching for Increased Circuit Efficiency
? SC ? 88 Small Outline (2 x 2 mm) for Maximum Circuit Board
Utilization, Same as SC ? 70 ? 6
? These are Pb ? Free Devices
Applications
? DC ? DC Conversion
? Low Side Load Switch
? Cell Phones, Computing, Digital Cameras, MP3s and PDAs
V (BR)DSS
20 V
http://onsemi.com
R DS(on) Typ
45 m W @ 4.5 V
55 m W @ 2.5 V
70 m W @ 1.8 V
SC ? 88 (SOT ? 363)
I D Max
4.0 A
D
1
6
D
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
20
Unit
V
D
2
5
D
Gate ? to ? Source Voltage
V GS
± 8.0
V
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
3.2
2.3
A
G
3
Top View
4
S
t ≤ 5s
T A = 25 ° C
4.0
T A = 25 ° C
Power Dissipation Steady
(Note 1) State
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
P D
I DM
T J ,
T STG
1.0
10
? 55 to
150
W
A
° C
1
MARKING DIAGRAM &
PIN ASSIGNMENT
D D S
6
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I S
T L
1.6
260
A
° C
SOT ? 363
CASE 419B
STYLE 28
1
T92 M G
G
THERMAL RESISTANCE RATINGS (Note 1)
D
D
G
Parameter
Junction ? to ? Ambient – Steady State
Symbol
R q JA
Max
125
Unit
° C/W
T92
M
G
= Device Code
= Date Code
= Pb ? Free Package
Junction ? to ? Ambient ? t ≤ 5 s
R q JA
80
(Note: Microdot may be in either location)
Junction ? to ? Lead – Steady State R q JL 45
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 3
1
Publication Order Number:
NTJS3157N/D
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相关代理商/技术参数 |
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| NTJS3157NT2 | 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3157NT2G | 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3157NT4 | 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS3157NT4G | 功能描述:MOSFET 20V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTJS4151P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 |
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