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| 型号： | NTJS4405NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 1A SOT-363 |
| 产品变化通告： | LTB Notification |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 350 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 60pF @ 10V |
| 功率 - 最大： | 630mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 带卷 (TR) |
NTJS4405N, NVJS4405N
Small Signal MOSFET
25 V, 1.2 A, Single, N ? Channel, SC ? 88
Features
? Advance Planar Technology for Fast Switching, Low R DS(on)
? Higher Efficiency Extending Battery Life
? AEC ? Q101 Qualified and PPAP Capable ? NVJS4405N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Boost and Buck Converter
? Load Switch
? Battery Protection
V (BR)DSS
25 V
http://onsemi.com
R DS(on) Typ
249 m W @ 4.5 V
299 m W @ 2.7 V
N ? Channel
Drain 1 2 5 6
I D Max
1.2 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
25
" 8.0
Unit
V
V
Gate 3
Drain Current
t<5s
T A = 25 ° C
I D
1.2
A
Source 4
Steady
State
Continuous Drain Current T A = 25 ° C
(Note 1)
T A = 75 ° C
Power Dissipation (Note 1) Steady State
Power Dissipation (Note 1) t v 5s
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I D
P D
P D
I DM
T J ,
T STG
1.0
0.80
0.63
0.89
3.7
? 55 to
+150
A
W
W
A
° C
1
SC ? 88/SOT ? 363
CASE 419B
MARKING DIAGRAM &
PIN ASSIGNMENT
D D S
6
TS M G
G
1
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
0.8
260
A
° C
TS
M
D
= Device Code
= Date Code
D
G
ESD Rating ? Machine Model
25
V
G
= Pb ? Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
ORDERING INFORMATION
Junction ? to ? Lead – Steady State (Note 1)
Junction ? to ? Ambient – Steady State (Note 1)
R q JL
R q JA
102
200
° C/W
Device
NTJS4405NT1G
Package
SC ? 88
Shipping ?
3000 / Tape & Reel
Junction ? to ? Ambient ? t v 5 s (Note 1)
R q JA
140
(Pb ? Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
NVJS4405NT1G SC ? 88 3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 6
1
Publication Order Number:
NTJS4405N/D
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