参数资料
型号: NTJS4405NT4G
厂商: ON Semiconductor
文件页数: 4/5页
文件大小: 0K
描述: MOSFET N-CH 25V 1A SOT-363
产品变化通告: LTB Notification
标准包装: 10,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 1A
开态Rds(最大)@ Id, Vgs @ 25° C: 350 毫欧 @ 600mA,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 1.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 60pF @ 10V
功率 - 最大: 630mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: SOT-363
包装: 带卷 (TR)
NTJS4405N, NVJS4405N
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
150
125
V DS = 0 V
C iss
V GS = 0 V
T J = 25 ° C
5
4
V GS = 4.5 V
Q G(TOT)
V DS = 5.0 V
100
C rss
3
75
Q GS
Q GD
50
C iss
2
25
0
10
5
C rss
0
V GS
V DS
5
10
15
20
C oss
25
1
0
0
I D = 0.95 A
T J = 25 ° C
0.2 0.4 0.6 0.8
Q g , TOTAL GATE CHARGE (nC)
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage vs. Total Charge
1000
V DD = 6.0 V
I D = 0.5 A
V GS = 4.5 V
1.2
1.1
1
0.9
V GS = 0 V
T J = 25 ° C
100
t f
t d(off)
0.8
0.7
0.6
0.5
10
1
t d(on)
t r
0.4
0.3
0.2
0.1
0
1
10
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
http://onsemi.com
4
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