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| 型号： | NTK3142PT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 215MA SOT-723 |
| 产品变化通告： | Product Obsolescence 05/Oct/2010 |
| 标准包装： | 8,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 215mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 欧姆 @ 260mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.3V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 15.3pF @ 10V |
| 功率 - 最大： | 280mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-723 |
| 供应商设备封装： | SOT-723 |
| 包装： | 带卷 (TR) |
NTK3142P
Small Signal MOSFET
? 20 V, ? 280 mA, P ? Channel with ESD
Protection, SOT ? 723
Features
? Enables High Density PCB Manufacturing
? 44% Smaller Footprint than SC ? 89 and 38% Thinner than SC ? 89
? Low Voltage Drive Makes this Device Ideal for Portable Equipment
? Low Threshold Levels, 1.8 V R DS(on) Rating
? Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
? Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology.
? This is a Pb ? Free Device
Applications
? Interfacing, Switching
? High Speed Switching
? Cellular Phones, PDA’s
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) TYP
2.7 W @ ? 4.5 V
4.1 W @ ? 2.5 V
6.1 W @ ? 1.8 V
SOT ? 723 (3 ? LEAD)
3
I D Max
? 280 mA
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
? 20
Unit
V
1
2
Gate ? to ? Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
V GS
I D
± 8.0
? 260
? 185
V
mA
1 ? Gate
2 ? Source
3 ? Drain
Top View
t v 5s
T A = 25 ° C
? 280
Power Dissipation
(Note 1)
Steady
State
t v 5s
T A = 25 ° C
P D
400
500
mW
MARKING DIAGRAM
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
? 215
? 155
280
mA
mW
CASE 631AA
SOT ? 723
KB
KB M
1
= Specific Device Code
Pulsed Drain Current
t p = 10 m s
I DM
? 310
mA
M
= Date Code
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T J ,
T STG
I S
T L
? 55 to
150
? 240
260
° C
mA
° C
ORDERING INFORMATION
Device Package Shipping ?
NTK3142PT1G SOT ? 723 4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
(Pb ? Free) 4 mm Pitch
NTK3142PT5G SOT ? 723 8000/Tape & Reel
(Pb ? Free) 2 mm Pitch
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2009
November, 2009 ? Rev. 2
1
Publication Order Number:
NTK3142P/D
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