参数资料
型号: NTK3142PT5G
厂商: ON Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: MOSFET P-CH 20V 215MA SOT-723
产品变化通告: Product Obsolescence 05/Oct/2010
标准包装: 8,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 215mA
开态Rds(最大)@ Id, Vgs @ 25° C: 4 欧姆 @ 260mA,4.5V
Id 时的 Vgs(th)(最大): 1.3V @ 250µA
输入电容 (Ciss) @ Vds: 15.3pF @ 10V
功率 - 最大: 280mW
安装类型: 表面贴装
封装/外壳: SOT-723
供应商设备封装: SOT-723
包装: 带卷 (TR)
NTK3142P
TYPICAL PERFORMANCE CURVES
0.4
0.3
0.2
T J = 25 ° C
V GS = ? 4 V to ? 10 V
? 3.0 V
? 2.5 V
0.4
0.3
0.2
V DS ≥ ? 5 V
T J = 25 ° C
? 2.2 V
0.1
0
0
0.5
1
1.5
2
2.5
? 2.0 V
? 1.8 V
? 1.6 V
? 1.4 V
3
0.1
0
1
T J = 150 ° C
1.5
T J = ? 40 ° C
2
2.5
3
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
? V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
9
8
I D = ? 0.26 A
T J = 25 ° C
10
9
8
T J = 25 ° C
V GS = ? 2.5 V
7
6
5
4
3
7
6
5
4
2
1
3
2
V GS = ? 4.5 V
0
1
2
3
4
5
6
7
8
9
10
1
0
0.1
0.2
0.3
? V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance vs. Gate ? to ? Source
Voltage
? I D, DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
9.0
8.0
7.0
V GS = ? 0.01 V
V GS = ? 1.8 V
1000
V GS = 0 V
6.0
V GS = ? 2.5 V
100
T J = 150 ° C
5.0
4.0
3.0
V GS = ? 4.5 V
10
T J = 125 ° C
2.0
1.0
? 50
? 25
0
25
50
75
100
125
150
1
5
10
15
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
? V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
相关PDF资料
PDF描述
B32520C1104J289 FILM CAP 0.1000UF 5% 100V
ASG-C-X-A-156.250MHZ-T OSC 156.250 MHZ 3.3V LVCMOS SMD
B32520C104J289 FILM CAP 0.1000UF 5% 63V
B32520C104J189 FILM CAP 0.1000UF 5% 63V
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