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参数资料
| 型号： | NTLJD3115PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CHAN DUAL 20V 6-WDFN |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 531pF @ 10V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 标准包装 |
| 其它名称： | NTLJD3115PT1GOSDKR |
NTLJD3115P
Power MOSFET
? 20 V, ? 4.1 A, m Cool t Dual P ? Channel,
2x2 mm WDFN Package
Features
? WDFN Package Provides Exposed Drain Pad for Excellent Thermal
Conduction
? 2x2 mm Footprint Same as SC ? 88
? Lowest R DS(on) Solution in 2x2 mm Package
? 1.8 V R DS(on) Rating for Operation at Low Voltage Gate Drive Logic
Level
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? Bidirectional Current Flow with Common Source Configuration
? This is a Pb ? Free Device
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) MAX I D MAX (Note 1)
100 m W @ ? 4.5 V
135 m W @ ? 2.5 V ? 4.1 A
200 m W @ ? 1.8 V
S1 S2
Applications
? Optimized for Battery and Load Management Applications in
Portable Equipment
? Li ? Ion Battery Charging and Protection Circuits
? High Side Load Switch
G1
D1
P ? CHANNEL MOSFET
G2
D2
P ? CHANNEL MOSFET
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
D2
D1
MARKING
DIAGRAM
Steady
State
2 JDM G 5
G
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Continuous Drain
Current (Note 1)
T A = 25 ° C
T A = 85 ° C
V DSS
V GS
I D
? 20
± 8.0
? 3.3
? 2.4
V
V
A
Pin 1
WDFN6 1 6
CASE 506AN
3 4
JD = Specific Device Code
M = Date Code
Power Dissipation
(Note 1)
t ≤ 5s
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 25 ° C
P D
? 4.1
1.5
2.3
W
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
? 2.3
? 1.6
0.71
A
W
S1
G1
1
2
D1
6
5
D1
G2
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I DM
T J , T STG
? 20
? 55 to
150
A
° C
D2
3
D2
4
S2
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
? 1.9
260
A
° C
(Top View)
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
NTLJD3115PT1G
Package
WDFN6
(Pb ? Free)
Shipping ?
3000/Tape & Reel
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm 2 , 2 oz Cu.
NTLJD3115PTAG WDFN6 3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 6
1
Publication Order Number:
NTLJD3115P/D
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