- 您现在的位置：买卖IC网 > PDF目录18450 > NTLJD3182FZTAG (ON Semiconductor)MOSFET P-CH 20V 2.2A 6-WDFN PDF资料下载
参数资料
| 型号： | NTLJD3182FZTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.2A 6-WDFN |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 450pF @ 10V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJD3182FZ
Power MOSFET and
Schottky Diode
? 20 V, ? 4.0 A, m Cool t Single P ? Channel
& Schottky Barrier Diode, ESD
Features
? WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
? Lowest R DS(on) Solution in 2x2 mm Package
? Footprint Same as SC ? 88 Package
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? ESD Protected
? High Current Schottky Diode: 2 A Current Rating
? This is a Pb ? Free Device
Applications
? Optimized for Battery and Load Management Applications in
Portable Equipment
? Li ? Ion Battery Charging and Protection Circuits
? DC ? DC Buck Circuit
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
? 20 V
V R Max
20 V
http://onsemi.com
P ? CHANNEL MOSFET
R DS(on) Max
100 m W @ ? 4.5 V
144 m W @ ? 2.5 V
200 m W @ ? 1.8 V
SCHOTTKY DIODE
V F Max
0.47 V
S A
I D Max
? 4.0 A
I F Max
2.0 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 20
± 8.0
V
V
G
Continuous Drain
Current (Note 1)
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
? 3.2
? 2.3
? 4.0
A
D
K
MARKING
K
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
P D
I D
P D
1.5
2.3
? 2.2
? 1.6
0.71
W
A
W
P ? CHANNEL MOSFET SCHOTTKY DIODE
D
WDFN6 1 6
Pin 1
DIAGRAM
CASE 506AN 2 JJM G 5
3 G 4
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I DM
T J , T STG
I S
T L
? 16
? 55 to
150
? 1.0
260
A
° C
A
° C
JJ = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
SCHOTTKY MAXIMUM RATINGS (T J = 2 5 ° C unless otherwise stated)
Parameter Symbol Value Unit
A
1
K
6
K
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V RRM
V R
30
30
V
V
N/C
2
D
5
G
Average Rectified Forward Current I F 2.0 A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
D
3
(Top View)
4
S
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm 2 , 2 oz Cu).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
December, 2008 ? Rev. 0
1
Publication Order Number:
NTLJD3180PZ/D
相关PDF资料 |
PDF描述 |
|---|---|
| ASG-P-X-A-1.500GHZ-T | OSC 1.500 GHZ 3.3V LVPECL SMD |
| PS1-200Q | SWITCH PUSHBUTTON DPDT 1A 125V |
| FDU6N50TU | MOSFET N-CH 500V 6A IPAK |
| PB-12331CG | SWITCH PUSHBUTTON SPDT 6A 125V |
| ASG-C-V-B-106.250MHZ | OSC 106.250 MHZ 2.5V LVCMOS SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLJD3182FZTBG | 功能描述:MOSFET 20V 4.1A UCOOL FETKY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJD3183CZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V/−20 V, 4.7 A/−4.0 A, μCool? Complementary, 2x2 mm, WDFN Package |
| NTLJD3183CZTAG | 功能描述:MOSFET 20V 4.1A UCOOL CMPLM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJD3183CZTBG | 功能描述:MOSFET 20V 4.1A UCOOL CMPLM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJD4114N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
发布紧急采购，3分钟左右您将得到回复。