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| 型号： | NTLJF3118NTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2.6A 6-WDFN |
| 产品变化通告： | Product Discontinuation 04/April/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 3.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 271pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJF3118N
Power MOSFET and
Schottky Diode
20 V, 4.6 A, m Cool ] N-Channel, with
2.0 A Schottky Barrier Diode, 2x2 mm
WDFN Package
http://onsemi.com
Features
? WDFN 2x2 mm Package Provides Exposed Drain Pad for
V (BR)DSS
MOSFET
R DS(on) Max
I D Max
?
?
?
?
?
Excellent Thermal Conduction
Footprint Same as SC-88 Package
1.8 V V GS Rated R DS(on)
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
Low V F 2 A Schottky Diode
This is a Pb-Free Device
20 V
V R Max
65 m W @ 4.5 V
85 m W @ 2.5 V
120 m W @ 1.8 V
SCHOTTKY DIODE
V F Typ
3.8 A
2.0 A
1.7 A
I F Max
Applications
? DC-DC Boost/Buck Converter
? Low Voltage Hard Disk DC Power Source
20 V
D
0.41 V
A
2.0 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain-to-Source Voltage
Symbol
V DSS
Value
20
Unit
V
G
Gate-to-Source Voltage
V GS
± 12
V
S
K
Continuous Drain Current
(Note 1)
Steady
State
t ≤ 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
3.8
2.8
4.6
A
N-CHANNEL MOSFET
SCHOTTKY DIODE
MARKING
DIAGRAM
Power Dissipation
Steady
P D
1.5
W
(Note 1)
Continuous Drain Current
(Note 2)
Power Dissipation
(Note 2)
State
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
2.2
2.6
1.9
0.7
A
1
WDFN6
CASE 506AN
JK
M
G
1 6
2 JK M G 5
3 G 4
= Specific Device Code
= Date Code
= Pb-Free Package
Pulsed Drain Current
t p = 10 m s
I DM
18
A
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature
T J ,
T STG
-55 to
150
° C
PIN CONNECTIONS
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
1.8
260
A
° C
A
1
K
6
K
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
N/C
2
5
G
Operating Conditions is not implied. Extended exposure to stresses above the
D
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 2 in sq pad size
D
3
4
S
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 1
1
Publication Order Number:
NTLJF3118N/D
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