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参数资料
| 型号： | NTLJF3118NTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2.6A 6-WDFN |
| 产品变化通告： | Product Discontinuation 04/April/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 3.8A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 271pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJF3118N
SCHOTTKY DIODE MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Parameter
Symbol
V RRM
V R
I F
Value
20
20
2.0
Unit
V
V
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State Min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
83
58
177
Unit
° C/W
3. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
I D = 250 m A, Ref to 25 ° C
20
10.4
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V DS = 16 V, V GS = 0 V
T J = 25 ° C
T J = 85 ° C
1.0
10
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
$ 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.4
0.7
1.0
V
Gate Threshold
V GS(TH) /T J
-3.0
mV/ ° C
Temperature Coefficient
Drain-to-Source On-Resistance
R DS(on)
V GS = 4.5, I D = 3.8 A
37
65
m W
V GS = 2.5, I D = 2.0 A
V GS = 1.8, I D = 1.7 A
46
65
85
120
Forward Transconductance
g FS
V DS = 10 V, I D =1.7 A
4.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
271
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = 10 V
72
43
Total Gate Charge
Q G(TOT)
3.7
nC
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V, I D = 3.8 A
0.3
0.6
1.0
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t d(ON)
3.8
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DD = 16 V,
I D = 1.0 A, R G = 2.0 W
4.7
11.1
5.8
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, IS =1.0 A
T J = 25 ° C
0.69
1.0
V
Reverse Recovery Time
t RR
V GS = 0 V, d ISD /d t = 100 A/ m s, I S = 1.0 A
10.2
ns
5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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