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参数资料
| 型号： | NTLUD3191PZTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1.7A DUAL 6UDFN |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 250 毫欧 @ 1.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.5nc @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 160pF @ 10V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN 裸露焊盘 |
| 供应商设备封装： | 6-UDFN（1.6x1.6） |
| 包装： | 带卷 (TR) |
NTLUD3191PZ
Power MOSFET
? 20 V, ? 1.8 A, m Cool t Dual P ? Channel,
ESD, 1.6x1.6x0.55 mm UDFN Package
Features
? UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
? Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
? ESD
? This is a Halide Free Device
? This is a Pb ? Free Device
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) MAX
250 m W @ ? 4.5 V
380 m W @ ? 2.5 V
500 m W @ ? 1.8 V
I D MAX
? 1.5 A
? 1.0 A
? 0.5 A
Applications
? High Side Load Switch
? PA Switch
? Battery Switch
? Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
G1
D1
700 m W @ ? 1.5 V
G2
? 0.2 A
D2
Parameter
Symbol
Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V DSS
V GS
? 20
± 8.0
V
V
S1
P ? Channel MOSFET
S2
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
? 1.4
? 1.0
? 1.8
0.8
A
W
1
6
UDFN6
CASE 517AT
m COOL t
MARKING
DIAGRAM
1
AC M G
G
Continuous Drain
Current (Note 2)
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
I D
1.3
? 1.1
? 0.8
A
AC = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Power Dissipation (Note 2)
Pulsed Drain Current
T A = 25 ° C
tp = 10 m s
P D
I DM
0.5
? 8.0
W
A
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
Gate-to-Source ESD Rating
(HBM) per JESD22 ? A114F
T J ,
T STG
I S
T L
ESD
-55 to
150
? 1.0
260
1000
° C
A
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm 2 , 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2009
April, 2009 ? Rev. 1
1
Publication Order Number:
NTLUD3191PZ/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLUD3A260PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET a??20 V, a??2.1 A,Cool Dual Pa??Channel, ESD, 1.6x1.6x0.55 mm UDFN Package |
| NTLUD3A260PZTAG | 功能描述:IGBT 晶体管 POWER MOSFET 20V 2A 200 M RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| NTLUD3A260PZTBG | 功能描述:IGBT 晶体管 POWER MOSFET 20V 2A 200 M RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| NTLUD3A50PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:a??20 V, a??5.6 A, Cool Dual Pa??Channel, 2.0x2.0x0.55 mm UDFN Package |
| NTLUD3A50PZTAG | 功能描述:MOSFET PFET UDFN 20V 5.6A 50MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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