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参数资料
| 型号： | NTLUS3A39PZTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 5.2A 6UDFN |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 920pF @ 15V |
| 功率 - 最大： | 600mW |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
NTLUS3A39PZ
Power MOSFET
? 20 V, ? 5.2 A, Single P ? Channel, ESD,
1.6x1.6x0.55 mm UDFN m Cool t Package
Features
? UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
? Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
? Ultra Low R DS(on)
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? Optimized for Power Management Applications for Portable
Products, Such as Cell Phones, PMP, Media Tablets, DSC, GPS, and
Others
?
Battery Switch
?
High Side Load Switch
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol Value
Unit
V (BR)DSS
? 20 V
G
http://onsemi.com
MOSFET
R DS(on) MAX
39 m W @ ? 4.5 V
50 m W @ ? 2.5 V
81 m W @ ? 1.8 V
147 m W @ ? 1.5 V
S
I D MAX
? 5.2 A
Drain-to-Source Voltage
Gate-to-Source Voltage
V DSS
V GS
? 20
± 8.0
V
V
6
1
AE M G
( m COOL ] )
G
Continuous Drain
Current (Note 1)
Continuous Drain
Current (Note 1)
Power Dissipa-
tion (Note 1)
Continuous Drain
Current (Note 2)
Steady
State
t ≤ 5s
Steady
State
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
I D
P D
I D
? 5.2
? 3.7
? 6.4
1.5
2.3
? 3.4
? 2.4
A
W
A
1
D
P ? Channel MOSFET
MARKING DIAGRAM
UDFN6
CASE 517AU
AE = Specific Device Code
M = Date Code
Power Dissipation (Note 2)
T A = 25 ° C
P D
0.6
W
G
= Pb ? Free Package
Pulsed Drain Current
Operating Junction and Storage
Temperature
tp = 10 m s
I DM
T J ,
T STG
? 17
-55 to
150
A
° C
(*Note: Microdot may be in either location)
PIN CONNECTIONS
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
? 1
260
A
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm 2 , 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 1
1
Publication Order Number:
NTLUS3A39PZ/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLUS3A39PZTBG | 功能描述:MOSFET T4S PCH 20/8V IN 1.6X1.6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLUS3A40PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 9.4Cool Single P Channel ESD 2.0x2.0x0.55 mm UDFNPackage |
| NTLUS3A40PZTAG | 功能描述:IGBT 晶体管 T4 20/8 PCH 2X2 8 CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| NTLUS3A40PZTBG | 功能描述:IGBT 晶体管 T4 20/8 PCH UDFN SING RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| NTLUS3A90PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:a??20 V, a??5.0 A, Cool Single Pa??Channel, ESD, 1.6x1.6x0.55 mm UDFN Package |
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