参数资料
型号: NTLUS3A40PZTAG
厂商: ON Semiconductor
文件页数: 2/6页
文件大小: 0K
描述: T4 20/8 PCH 2X2 UDFN SING
标准包装: 3,000
系列: µCool™
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 4A
开态Rds(最大)@ Id, Vgs @ 25° C: 29 毫欧 @ 6.4A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 29nC @ 4.5V
输入电容 (Ciss) @ Vds: 2600pF @ 15V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: 6-UDFN 裸露焊盘
供应商设备封装: 6-uDFN(2x2)
包装: 带卷 (TR)
其它名称: NTLUS3A40PZTAG-ND
NTLUS3A40PZTAGOSTR
NTLUS3A40PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Symbol
R θJA
R θJA
R θJA
Max
72
33
189
Units
° C/W
ELECTRICAL CHARACTERISTIC                S (T J = 25 ° C unles s otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
I D = ? 250 m A, ref to 25 ° C
? 20
? 5.0
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 20 V
T J = 25 ° C
T J = 85 ° C
? 1.0
? 10
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 10
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 0.4
3.0
? 1.0
V
mV/ ° C
Drain-to-Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 6.4 A
23
29
m W
V GS = ? 2.5 V, I D = ? 4.8 A
V GS = ? 1.8 V, I D = ? 2.5 A
V GS = ? 1.5 V, I D = ? 1.5 A
31
43
60
39
60
120
Forward Transconductance
g FS
V DS = ? 15 V, I D = ? 4.0 A
18
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1 MHz,
V DS = ? 15 V
V GS = ? 4.5 V, V DS = ? 15 V;
I D = ? 4.0 A
2600
200
190
29
1.4
3.7
8.1
pF
nC
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
t d(ON)
9.0
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 15 V,
I D = ? 4.0 A, R G = 1 W
18
126
71
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
V GS = 0 V,
I S = ? 1.0 A
T J = 25 ° C
T J = 125 ° C
0.65
0.55
1.0
V
Reverse Recovery Time
t RR
25
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, dis/dt = 100 A/ m s,
I S = ? 1.0 A
10
15
Reverse Recovery Charge
Q RR
13.6
nC
3.
4.
5.
6.
Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm 2 , 2 oz. Cu.
Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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