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| 型号： | NTMFS4119NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 18A 30V SO-8FL |
| 产品变化通告： | Reactivation Notice 08/Apr/2011 Product Discontinuation 27/Jan/2012 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.5 毫欧 @ 29A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4800pF @ 24V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMFS4119NT1GOSCT |
NTMFS4119N
Power MOSFET
30 V, 30 A, Single N ? Channel,
SO ? 8 Flat Lead
Features
? Low R DS(on)
? Fast Switching Times
? Low Inductance SO ? 8 Package
? These are Pb ? Free Devices
Applications
? Notebooks, Graphics Cards
? Low Side Switch
? DC ? DC
V (BR)DSS
30 V
http://onsemi.com
R DS(on) Typ
2.3 m W @ 10 V
3.1 m W @ 4.5 V
D
I D Max
(Note 1)
30 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
$ 20
V
V
G
Continuous Drain Current
(Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
18
13
A
S
t v 10 s
T A = 25 ° C
30
MARKING
Power Dissipation (Note 1)
Steady
State
T A = 25 ° C
P D
2.3
W
DIAGRAM
D
Continuous Drain Current
(Note 2)
Power Dissipation (Note 2)
t v 10 s
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
6.1
11
8.0
0.9
A
W
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4119N
AYWZZ
D
D
D
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche Energy
(V DD = 30 V, V GS = 10 V, I PK = 29 A,
L = 1 mH, R G = 25 W )
I DM
T J , T stg
I S
E AS
89
? 55 to
150
8.0
421
A
° C
A
mJ
4119N
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
THERMAL RESISTANCE MAXIMUM RATINGS
T L
260
° C
ORDERING INFORMATION
Shipping ?
Device
Package
Parameter
Symbol
Value
Unit
NTMFS4119NT1G
SO ? 8 FL
1500 / Tape &
Junction ? to ? Case ? Steady State
Junction ? to ? Ambient ? Steady State (Note 1)
Junction ? to ? Ambient ? t v 10 s (Note 1)
R q JC
R q JA
R q JA
1.3
53.7
20.5
° C/W
NTMFS4119NT3G
(Pb ? Free)
SO ? 8 FL
(Pb ? Free)
Reel
5000 / Tape &
Reel
Junction ? to ? Ambient ? Steady State (Note 2) R q JA 138.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 6
1
Publication Order Number:
NTMFS4119N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTMFS4120NT1G | MOSFET N-CHAN 18A 30V SO-8FL |
| NTMFS4121NT1G | MOSFET N-CHAN 17A 30V SO-8FL |
| NTMFS4122NT1G | MOSFET N-CHAN 14A 30V SO-8FL |
| NTMFS4701NT3G | MOSFET N-CH 12.3A 30V SO8 FL |
| NTMFS4707NT3G | MOSFET N-CH 30V 6.9A SO8 FL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4119NT3G | 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4120N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead |
| NTMFS4120NT1G | 功能描述:MOSFET 30V 31A Single N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4120NT3G | 功能描述:MOSFET 30V 31A Single N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4121N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead |
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