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| 型号： | NTMFS4701NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 12.3A 30V SO8 FL |
| 产品变化通告： | Product Discontinuation 09/Jan/2008 |
| 标准包装： | 5,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1280pF @ 24V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS4701N
Power MOSFET
30 V, 20 A, Single N ? Channel,
SOIC ? 8 Flat Lead Package
Features
? Thermally and Electrically Enhanced Packaging Compatible with
Standard SOIC ? 8
? New Package Provides Capability of Inspection and Probe After
Board Mounting
? Ultra Low R DS(on) (at 4.5 V GS ), Low Gate Resistance and Low Q G
? Optimized for High Side Control Applications
? High Speed Switching Capability
? These are Pb ? Free Devices
Applications
? Notebook Computer VCORE Applications
? Network Applications
? DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) Typ
6.0 m W @ 10 V
8.0 m W @ 4.5 V
N ? Channel
D
G
I D Max
20 A
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
S
S D
4701N
S
AYWZZ
S
G
D
D
Gate ? to ? Source Voltage
Continuous Drain Current
(Note 1 )
Power Dissipation
(Note 1)
Continuous Drain Current
(Note 2)
Power Dissipation
(Note 2)
Steady
State
t v 10 s
Steady
State
t v 10 s
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 25 ° C
T A = 25 ° C
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
V GS
I D
I D
P D
P D
I D
P D
$ 20
12.3
9.8
20
2.3
6.0
7.7
6.2
0.9
V
A
W
A
W
1
SOIC ? 8 FLAT LEAD
CASE 488AA
STYLE 1
4701N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING DIAGRAM &
PIN ASSIGNMENT
D
Pulsed Drain Current t p = 10 m s
Operating and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche Energy
(V DD = 25 V, V GS = 10 V, I PK = 7.5 A,
L = 10 mH, R G = 25 W )
I DM
T J , T stg
I S
E AS
60
? 55 to
150
6.0
280
A
° C
A
mJ
ORDERING INFORMATION
Device Package Shipping ?
NTMFS4701NT1G SOIC ? 8 FL 1500 / Tape & Reel
(Pb ? Free)
NTMFS4701NT3G SOIC ? 8 FL 5000 / Tape & Reel
(Pb ? Free)
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 in from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq. pad size
(Cu area 1.127 in sq. [1 oz} including traces).
2. Surface ? mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq.).
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 4
1
Publication Order Number:
NTMFS4701N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTMFS4707NT3G | MOSFET N-CH 30V 6.9A SO8 FL |
| NTMFS4708NT3G | MOSFET N-CH 30V 7.8A SO8 FL |
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| NTMFS4821NT3G | MOSFET N-CH 30V 8.8A SO-8FL |
| NTMFS4823NT3G | MOSFET N-CH 30V 6.9A SO-8FL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4707N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:+12 V Telecom Power Conversion Solutions |
| NTMFS4707NT1G | 功能描述:MOSFET 30V 17A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4707NT3G | 功能描述:MOSFET 30V 17A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4708N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL |
| NTMFS4708NT1G | 功能描述:MOSFET 30V 19A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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