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| 型号： | NTMFS4744NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7A SO8 FL |
| 产品变化通告： | Product Obsolescence 24/Jan/2011 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.6 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1300pF @ 12V |
| 功率 - 最大： | 880mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMFS4744NT1GOSCT |
NTMFS4744N
Power MOSFET
30 V, 53 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb ? Free Devices
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
10 m W @ 10 V
14 m W @ 4.5 V
N ? Channel
D
I D MAX
53 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
V GS
20
V
G
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
11
8.0
2.2
A
W
S
MARKING
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
ID
P D
I D
7.0
5.0
0.88
53
38
A
W
A
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
DIAGRAM
D
4744N
AYWZZ
D
D
D
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
t p =10 m s
T C = 25 ° C
T A = 25 ° C
P D
I DM
47.2
106
W
A
4744N
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Operating Junction and Storage Temperature
T J , T STG
? 55 to
+150
° C
Source Current (Body Diode)
I S
46
A
ORDERING INFORMATION
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V,
I L = 24 A pk , L = 1.0 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
dV/dt
EAS
T L
6.0
286
260
V/ns
mJ
° C
Device
NTMFS4744NT1G
NTMFS4744NT3G
Package
SO ? 8 FL
(Pb ? Free)
SO ? 8 FL
(Pb ? Free)
Shipping ?
1500 Tape & Reel
5000 Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 5
1
Publication Order Number:
NTMFS4744N/D
相关PDF资料 |
PDF描述 |
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| NTMFS4821NT3G | MOSFET N-CH 30V 8.8A SO-8FL |
| NTMFS4823NT3G | MOSFET N-CH 30V 6.9A SO-8FL |
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| NTMFS4833NST1G | MOSFET N-CH 30V 16A SO-8FL |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4744NT3G | 功能描述:MOSFET NFET 30V 53A 10MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4821N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL |
| NTMFS4821NT1G | 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4821NT3G | 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4823N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 30 A, Single N−Channel, SO−8 FL |
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